A Trench IGBT distributed model with thermo-sensible parameters
Résumé
In this paper, a one-dimensional physical model with thermally dependent parameters of the Trench Insulated Gate Bipolar Transistor (TIGBT) is presented. This model is implemented in the Saber simulator in MAST language. Simulation and experimental results are compared for different temperatures in order to validate the model in adiabatic conditions.