Long-term reliability prediction of 935 nm InGaAs/GaAs Light Emitting Diodes using degradation laws and ageing tests with low acceleration factor - Archive ouverte HAL
Article Dans Une Revue Quality and Reliability Engineering International Année : 2005

Long-term reliability prediction of 935 nm InGaAs/GaAs Light Emitting Diodes using degradation laws and ageing tests with low acceleration factor

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Micro et nanotechnologies/Microélectronique

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https://hal.science/hal-00183945

Soumis le : mardi 30 octobre 2007-12:39:02

Dernière modification le : lundi 5 juin 2023-16:52:11

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hal-00183945 , version 1 (30-10-2007)

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  • HAL Id : hal-00183945 , version 1

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Yannick Deshayes, Laurent Bechou, Frédéric Verdier, Yves Danto. Long-term reliability prediction of 935 nm InGaAs/GaAs Light Emitting Diodes using degradation laws and ageing tests with low acceleration factor. Quality and Reliability Engineering International, 2005, 21, pp.1. ⟨hal-00183945⟩

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