Evolution of base current in C-In doped GaInP/GaAs HBT under current induced stress - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 1998
Fichier non déposé

Dates et versions

hal-00183480 , version 1 (30-10-2007)

Identifiants

  • HAL Id : hal-00183480 , version 1

Citer

Cristell Maneux, Nathalie Labat, Pascal Fouillat, Andre Touboul, Yves Danto. Evolution of base current in C-In doped GaInP/GaAs HBT under current induced stress. European Solid State Device Research Conference (Ed. Frontières), ESSDERC, 1998, France. pp.1. ⟨hal-00183480⟩
56 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More