Design and Implementation of BiFET LNAs for W-CDMA / IEEE 802.11a Applications
Résumé
We present is this article consistent guidelines to the design and implementation of fully-integrated BiFET low noise amplifiers (LNA). The effectiveness of BiFET topology and the applied methodologies are verified throughout measurement results of two fabricated BiFET LNAs. The first LNA is dedicated to W-CDMA applications (2.11-2.17GHz) and its die area is 1.0 ÿ 0.7 mm2. The second manufactured circuit is targeted to W-LAN IEEE 802.11a standard in European band (5.15-5.35GHz). The W-LAN LNA die area is 1.0 ÿ 0.57 mm2.