Conference Papers
Year : 2009
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https://hal.science/hal-00173481
Submitted on : Wednesday, September 19, 2007-8:19:43 PM
Last modification on : Saturday, September 27, 2025-7:00:02 PM
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- HAL Id : hal-00173481 , version 1
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M. Pons, S. Nishizawa, P. Wellmann, E. Blanquet, D. Chaussende, et al.. Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling. Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Kyoto, Japan. pp.83-88. ⟨hal-00173481⟩
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