Conference Papers Year : 2009
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hal-00173481 , version 1 (19-09-2007)

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  • HAL Id : hal-00173481 , version 1

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M. Pons, S. Nishizawa, P. Wellmann, E. Blanquet, D. Chaussende, et al.. Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling. Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Kyoto, Japan. pp.83-88. ⟨hal-00173481⟩
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