Relative Intensity Noise of an injected semiconductor laser - Archive ouverte HAL
Communication Dans Un Congrès Année : 2006

Relative Intensity Noise of an injected semiconductor laser

Résumé

A study of the Relative Intensity Noise (RIN) of an optically injected semiconductor laser is presented versus the injected power. The seeded laser is then operating from an amplifying regime towards a locking one, at the same wavelength than that of the master one. It is shown that when the Master is more coherent than the slave, a reduction of the RIN of the slave is progressively observed along with an increase of the injected power. In the converse case, no significant modification of the RIN is experimentally observed.
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Dates et versions

hal-00163167 , version 1 (16-07-2007)

Identifiants

Citer

Julien Poette, Olivier Vaudel, Pascal Besnard. Relative Intensity Noise of an injected semiconductor laser. International conference on COherent and Nonlinear Optics / international conference on Lasers, Applications and Technologies (ICONO/LAT 2005), 11-15 may 2005, Jan 2006, St-Petersburg, Russia. Vol.6054, pp.48-57, ⟨10.1117/12.660527⟩. ⟨hal-00163167⟩
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