High emission and detection efficiency of terahertz beam with heavy-ion-irradiated InP material excited at 0.8 µm - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Electronics Letters Année : 2006

High emission and detection efficiency of terahertz beam with heavy-ion-irradiated InP material excited at 0.8 µm

Résumé

The performance from a high-energy Br+-irradiated InP photoconductive antenna excited at 800 nm has been investigated. The ionic irradiation into InP reduces significantly the lifetime of photo-carriers in the substrate material down to 1.4 ps without the requirement of an epitaxial layer growth. THz emitter and detector efficiency are strongly dependent on irradiation doses. It was found that equivalent bandwidth and amplitude compared with LTG-GaAs switches excited at 800 nm under the same experimental conditions.
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hal-00162819 , version 1 (16-07-2007)

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Patrick Mounaix, Marc Tondusson, Nicolas Chimot, Juliette Mangeney, Karine Blary, et al.. High emission and detection efficiency of terahertz beam with heavy-ion-irradiated InP material excited at 0.8 µm. Electronics Letters, 2006, 42 (15), pp.879-880. ⟨10.1049/el:20061529⟩. ⟨hal-00162819⟩
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