Structural and electrical properties of BaTi1−xZrxO3 sputtered thin films: effect of the sputtering conditions
Résumé
aTi1−xZrxO3 thin films have been prepared on Si and Pt/TiO2/SiO2/Si substrates by radio-frequency magnetron sputtering varying the deposition parameters, such as the chamber pressure, the substrate temperature and the gas composition. The films have been probed by X-ray Diffraction (XRD), Wavelength Dispersive Spectrometry (WDS), Scanning Electron Microscopy (SEM) and Rutherford Backscattering Spectrometry (RBS)...
Domaines
MatériauxOrigine | Fichiers produits par l'(les) auteur(s) |
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