Enhancement mode metamorphic In0.33Al0.67As/In0.34Ga0.66As HEMT on GaAs substrate with high breakdown voltage - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Electron Device Letters Année : 2000

Enhancement mode metamorphic In0.33Al0.67As/In0.34Ga0.66As HEMT on GaAs substrate with high breakdown voltage

Résumé

This paper presents original and experimental results provided by E-mode Al/sub 0.67/In/sub 0.33/As/Ga/sub 0.66/In/sub 0.34/As metamorphic HEMT. The devices exhibit good dc and rf performances. The 0.4 μm gate length devices have saturation current density of 355 mA/mm at +0.6 V gate-to-source voltage. The Schottky characteristic is a typical reverse gate-to-drain breakdown voltage of -16 V. It is the first time, to our knowledge, that gate current issued from impact ionization have been observed in these devices versus gate to drain extension. These results are the first reported for E-mode Al/sub 0.67/In/sub 0.33/As/Ga/sub 0.66/In/sub 0.34/As MM-HEMTs on GaAs substrate.
Fichier non déposé

Dates et versions

hal-00158983 , version 1 (02-07-2007)

Identifiants

Citer

Mustafa Boudrissa, Elisabet Delos, Yvon Cordier, Didier Theron, Jean-Claude de Jaeger. Enhancement mode metamorphic In0.33Al0.67As/In0.34Ga0.66As HEMT on GaAs substrate with high breakdown voltage. IEEE Electron Device Letters, 2000, 21 (11), pp.512-514. ⟨10.1109/55.877193⟩. ⟨hal-00158983⟩
19 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More