Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy : similarities and differences with the growth of strained arsenides - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2000

Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy : similarities and differences with the growth of strained arsenides

D. Deresmes
F. Mollot
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Dates et versions

hal-00158443 , version 1 (29-06-2007)

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  • HAL Id : hal-00158443 , version 1

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X. Wallart, D. Deresmes, F. Mollot. Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy : similarities and differences with the growth of strained arsenides. 2000, pp.255-259. ⟨hal-00158443⟩
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