Electrical effects of SiNX deposition on GaN MESFETs

B. Boudart; Christophe Gaquière; Y. Guhel; Jean-Claude de Jaeger; M.A. Poisson

Journal Articles Electronics Letters Year : 2001

Electrical effects of SiNX deposition on GaN MESFETs

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B. Boudart

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PersonId : 16148
IdHAL : bertrand-boudart
IdRef : 060260092

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

Christophe Gaquière

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IdHAL : christophe-gaquiere
ORCID : 0000-0003-3082-2489
IdRef : 059765615

Y. Guhel

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Jean-Claude de Jaeger

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PersonId : 747322
IdHAL : jean-claude-dejaeger

M.A. Poisson

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Submitted on : Thursday, June 7, 2007-10:52:20 AM

Last modification on : Wednesday, January 24, 2024-9:54:18 AM

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hal-00152596 , version 1 (07-06-2007)

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B. Boudart, Christophe Gaquière, Y. Guhel, Jean-Claude de Jaeger, M.A. Poisson. Electrical effects of SiNX deposition on GaN MESFETs. Electronics Letters, 2001, 37, pp.527-528. ⟨hal-00152596⟩

Electrical effects of SiNX deposition on GaN MESFETs

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