Electrical effects of SiNX deposition on GaN MESFETs - Archive ouverte HAL
Journal Articles Electronics Letters Year : 2001

Electrical effects of SiNX deposition on GaN MESFETs

Christophe Gaquière
Y. Guhel
  • Function : Author
Jean-Claude de Jaeger
M.A. Poisson
  • Function : Author
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Dates and versions

hal-00152596 , version 1 (07-06-2007)

Identifiers

  • HAL Id : hal-00152596 , version 1

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B. Boudart, Christophe Gaquière, Y. Guhel, Jean-Claude de Jaeger, M.A. Poisson. Electrical effects of SiNX deposition on GaN MESFETs. Electronics Letters, 2001, 37, pp.527-528. ⟨hal-00152596⟩
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