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Article Dans Une Revue Ferroelectrics Année : 2001

Piezoelectric properties of PZT: influence of (Zr/Ti) ratio and niobium substitution

T. Haccart
  • Fonction : Auteur
Caroline Soyer
Eric Cattan
Denis Remiens

Résumé

Pb(Zr,Ti)03 (PZT) and Pb(Zr,Ti,Nb)O, (PNZT) thin films were grown on platinized silicon substrates by r.f. magnetron sputtering followed by a post-annealing treatment. PZT films with various Zrmi compositions ranging from 15/85 to 70/30 were grown; for PNZT films (the ratio Zrni is fixed to 54/46) the Niobium concentration varied from 1 to 7 at.% by increment of 1 at.%. The main objective of this work is to determine the effects of the Zrni ratio and the Nb concentration on the electrical properties of PZT thin films. The dielectric, ferroelectric and piezoelectric properties of the films were systematically evaluated. In particular, the piezoelectric properties were very sensitive to the Nb substitution and the ZrRi ratio.
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hal-00152479 , version 1 (19-08-2022)

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Paternité - Pas d'utilisation commerciale

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T. Haccart, Caroline Soyer, Eric Cattan, Denis Remiens. Piezoelectric properties of PZT: influence of (Zr/Ti) ratio and niobium substitution. Ferroelectrics, 2001, 254 (1), pp.185-195. ⟨10.1080/00150190108214999⟩. ⟨hal-00152479⟩

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