MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances - Archive ouverte HAL Access content directly
Conference Papers Year : 2002

MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances

Y. Cordier
F. Semond
  • Function : Author
P. Lorenzini
  • Function : Author
N. Grandjean
F. Natali
  • Function : Author
B. Damilano
J. Massies
  • Function : Author
Virginie Hoel
A. Minko
  • Function : Author
N. Vellas
  • Function : Author
Christophe Gaquière
B. Dessertenne
  • Function : Author
S. Cassette
  • Function : Author
Et Al.
  • Function : Author
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Dates and versions

hal-00149696 , version 1 (28-05-2007)

Identifiers

  • HAL Id : hal-00149696 , version 1

Cite

Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, et al.. MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances. 2002, pp.99-100. ⟨hal-00149696⟩
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