Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon (111) substrate - Archive ouverte HAL Access content directly
Journal Articles IEEE Microwave and Wireless Components Letters Year : 2003

Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon (111) substrate

Christophe Gaquière
A. Minko
  • Function : Author
Virginie Hoel
Jean-Claude de Jaeger
Y. Cordier
F. Semond
  • Function : Author
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Dates and versions

hal-00146662 , version 1 (15-05-2007)

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  • HAL Id : hal-00146662 , version 1

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N. Vellas, Christophe Gaquière, A. Minko, Virginie Hoel, Jean-Claude de Jaeger, et al.. Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon (111) substrate. IEEE Microwave and Wireless Components Letters, 2003, 13, pp.255-257. ⟨hal-00146662⟩
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