Journal Articles
Solid-State Electronics
Year : 2006
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https://hal.science/hal-00145112
Submitted on : Monday, May 7, 2007-6:30:50 PM
Last modification on : Friday, December 12, 2025-4:30:35 PM
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- HAL Id : hal-00145112 , version 1
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F. Lime, F. Andrieu, J. Derix, Gérard Ghibaudo, F. Boeuf, et al.. Low temperature characterization of effective mobility in uniaxially and biaxially strained N-MOSFETs. Solid-State Electronics, 2006, 50, pp.644. ⟨hal-00145112⟩
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