High frequency surface acoustic waves excited on thin oriented LiNbO3 single crystal layers transferred onto silicon - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control Année : 2007

High frequency surface acoustic waves excited on thin oriented LiNbO3 single crystal layers transferred onto silicon

Résumé

The need for high-frequency, wide-band filters has instigated many developments based on combining thin piezoelectric films and high acoustic velocity materials (sapphire, diamond-like carbon, silicon, etc.) to ease the manufacture of devices operating above 2 GHz. In the present work, a technological process has been developed to achieve thin-oriented, single-crystal lithium niobate (LiNbO3) layers deposited on (100) silicon wafers for the fabrication of radio-frequency (RF) surface acoustic wave (SAW) devices. The use of such oriented thin films is expected to favor large coupling coefficients together with a good control of the layer properties, enabling one to chose the best combination of layer orientation to optimize the device. A theoretical analysis of the elastic wave assumed to propagate on such a combination of material is first exposed. Technological aspects then are described briefly. Experimental results are presented and compared to the state of art.
Fichier non déposé

Dates et versions

hal-00143549 , version 1 (25-04-2007)

Identifiants

  • HAL Id : hal-00143549 , version 1

Citer

Sylvain Ballandras, Thomas Pastureaud, William Steichen, William Daniau, Vincent Laude. High frequency surface acoustic waves excited on thin oriented LiNbO3 single crystal layers transferred onto silicon. IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2007, 84 (4), pp.870-876. ⟨hal-00143549⟩
46 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More