Bridging C<sub>60</sub> by silicon : towards non-van der Waals C<sub>60</sub>-based materials - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2002

Bridging C60 by silicon : towards non-van der Waals C60-based materials

F. Tournus
B. Masenelli
P. Mélinon
  • Fonction : Auteur
X. Blase
  • Fonction : Auteur
A. Perez
  • Fonction : Auteur
A.M. Flanck
  • Fonction : Auteur
P. Lagarde
  • Fonction : Auteur

Résumé

We report the three-dimensional packing of C60 clusters stabilized by the addition of Si. X-ray absorption spectroscopy reveals that Si atoms are in an unusual environment: between two C60, with ten or more carbon neighbors. According to ab initio calculations, the cohesive energy is about 2 eV per Si atom, much higher than the Van der Waals binding energy between two C60. Experiment and calculations both indicate a charge transfer from Si to C60. Eventually, the film may have a local decahedral symmetry.
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Dates et versions

hal-00143049 , version 1 (24-04-2007)

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Citer

F. Tournus, B. Masenelli, P. Mélinon, X. Blase, A. Perez, et al.. Bridging C60 by silicon : towards non-van der Waals C60-based materials. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 65 (16), pp.165417. ⟨10.1103/PhysRevB.65.165417⟩. ⟨hal-00143049⟩
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