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Article Dans Une Revue IEEE Photonics Technology Letters Année : 2004

High performance evanescent edge coupled waveguide uni-traveling-carrier photodiodes for >40Gb/s optical receivers

Résumé

We have demonstrated a low-cost high-bandwidth and high-responsivity evanescent waveguide unitravelling-carrier photodiode (PD) fabricated using all 2-in InP processing including on-wafer mirrors and coating. Optimization of the optical input waveguide was made using the method of the genetic algorithm associated with a beam propagation method. Optical fiber coupling to the PD is based on a diluted multimode waveguide allowing simple material epitaxial growth. The fabricated PDs exhibit simultaneously 0.76-A/W responsivity at 1.55 /spl mu/m, >50-GHz bandwidth, and more than 22-mA average saturation photocurrent at 50 GHz. The light polarization dependence is less than 0.1 dB
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Dates et versions

hal-00141183 , version 1 (12-04-2007)

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Mohand Achouche, Vincent Magnin, Didier Decoster, Joseph Harari, François Lelarge, et al.. High performance evanescent edge coupled waveguide uni-traveling-carrier photodiodes for >40Gb/s optical receivers. IEEE Photonics Technology Letters, 2004, 16, pp.584-586. ⟨10.1109/LPT.2003.821082⟩. ⟨hal-00141183⟩
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