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Article Dans Une Revue International Journal of Numerical Modelling: Electronic Networks, Devices and Fields Année : 2004

Role of the temperature distribution on the PN junction behaviour in the electro-thermal simulation

Résumé

Electro-thermal simulations of a PIN-diode based on the finite-element method, show a non-uniform temperature distribution inside the device during switching transients. Hence, the implicit assumption of a uniform temperature distribution when coupling an analytical electrical model and a thermal model yields inaccurate electro-thermal behaviour of the PIN-diode so far. The idea of including non-uniform temperature distribution into power semiconductor device models is not new, as accurate electro-thermal simulations are required for designing compact power electronic systems (as IC or MCM). Instead of using a one-dimensional finite difference or element method, the bond graphs and the hydrodynamic method are utilized to build an electro-thermal model of the PIN-diode. The results obtained by this original technique are compared with those obtained by a commercial finite-element simulator. The results are similar but the computation effort of the proposed technique is a fraction of that required by finite-element simulators. Moreover, the proposed technique may be applied easily to other power semiconductor devices.
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Dates et versions

hal-00140093 , version 1 (04-04-2007)

Identifiants

  • HAL Id : hal-00140093 , version 1

Citer

Hatem Garrab, Bruno Allard, Hervé Morel, Sami Ghedira, Kamel Besbes. Role of the temperature distribution on the PN junction behaviour in the electro-thermal simulation. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2004, 17 (6): 539-560 NOV-DEC 2004 (6), pp.539-560. ⟨hal-00140093⟩
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