Article Dans Une Revue IEEE Transactions on Nanotechnology Année : 2006

Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices

Résumé

Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory circuit, this paper investigates process repeatability, device uniformity in single-dot memory arrays, device scalability, and process transferability to an industrial application

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hal-00138655 , version 1 (27-09-2024)

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Xing Tang, N. Reckinger, V. Bayot, Christophe Krzeminski, Emmanuel Dubois, et al.. Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices. IEEE Transactions on Nanotechnology, 2006, 5 (6), pp.649-656. ⟨10.1109/TNANO.2006.883481⟩. ⟨hal-00138655⟩
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