A 310°/3.6dB K-band phaseshifter using paraelectric BST thin films

Ferro- and para-electric BaSrTiO/sub 3/ (/spl epsiv//sub r//spl sim/350 and tg/spl delta//spl sim/5/spl times/10/sup -2/ at 0V) thin films were deposited by low-cost sol-gel techniques. Subsequently, the films were used for fabricating coplanar waveguide phaseshifters using tunable finger-shaped capacitors. A 310/spl deg/ phaseshift was obtained at 30GHz and 35V of tuning voltage with 3.6dB of insertion loss yielding a figure of merit of 85/spl deg//dB.

Mots clés

Binary search trees Transistors Coplanar waveguides Capacitors Frequency Ferroelectric materials Atomic force microscopy Scanning electron microscopy Sputtering Dielectric materials

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Sciences de l'ingénieur [physics]

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https://hal.science/hal-00126833

Soumis le : vendredi 26 janvier 2007-11:45:36

Dernière modification le : mercredi 24 janvier 2024-09:54:18

Dates et versions

hal-00126833 , version 1 (26-01-2007)

Identifiants

HAL Id : hal-00126833 , version 1
DOI : 10.1109/LMWC.2005.863198

Citer

Gabriel Vélu, Karine Blary, Ludovic Burgnies, Jean-Claude Carru, Elisabet Delos, et al.. A 310°/3.6dB K-band phaseshifter using paraelectric BST thin films. IEEE Microwave and Wireless Components Letters, 2006, 16 (2), pp.87-89. ⟨10.1109/LMWC.2005.863198⟩. ⟨hal-00126833⟩

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