A 310°/3.6dB K-band phaseshifter using paraelectric BST thin films - Archive ouverte HAL Access content directly
Journal Articles IEEE Microwave and Wireless Components Letters Year : 2006

A 310°/3.6dB K-band phaseshifter using paraelectric BST thin films

Abstract

Ferro- and para-electric BaSrTiO/sub 3/ (/spl epsiv//sub r//spl sim/350 and tg/spl delta//spl sim/5/spl times/10/sup -2/ at 0V) thin films were deposited by low-cost sol-gel techniques. Subsequently, the films were used for fabricating coplanar waveguide phaseshifters using tunable finger-shaped capacitors. A 310/spl deg/ phaseshift was obtained at 30GHz and 35V of tuning voltage with 3.6dB of insertion loss yielding a figure of merit of 85/spl deg//dB.
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Dates and versions

hal-00126833 , version 1 (26-01-2007)

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Gabriel Vélu, Karine Blary, Ludovic Burgnies, Jean-Claude Carru, Elisabet Delos, et al.. A 310°/3.6dB K-band phaseshifter using paraelectric BST thin films. IEEE Microwave and Wireless Components Letters, 2006, 16 (2), pp.87-89. ⟨10.1109/LMWC.2005.863198⟩. ⟨hal-00126833⟩
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