Strong electron correlation effects in non-volatile electronic memory devices - Archive ouverte HAL
Article Dans Une Revue Applied Physics Letters Année : 2006

Strong electron correlation effects in non-volatile electronic memory devices

Isao H. Inoue
  • Fonction : Auteur
Maria Jose Sanchez
  • Fonction : Auteur

Résumé

We investigate hysteresis effects in a model for non-volatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal oxides. One of them is a novel switching effect based on a metal-insulator transition due to strong electron correlations at the dielectric/metal interface. The observed resistance switching phenomenon could be the experimental realisation of a novel type of strongly correlated electron device.

Dates et versions

hal-00126378 , version 1 (24-01-2007)

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Citer

Marcelo J. Rozenberg, Isao H. Inoue, Maria Jose Sanchez. Strong electron correlation effects in non-volatile electronic memory devices. Applied Physics Letters, 2006, 88, pp.033510. ⟨hal-00126378⟩
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