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Communication Dans Un Congrès Année : 2006

CNTFET basics and simulation

Résumé

This paper provides an overview of current types of CNTFETs and of some compact models. Using the available models, we simulated and analyzed the influence of the parameters on the device characteristics. A conclusion is that the tube diameter influences not only the current level, but also the threshold voltage of the CNTFET, while the contact resistance influences only the current level. From a designer's point of view, taking care of the parameter variations and in particular of the nanotube diameters is crucial to achieve reliable circuits.

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Dates et versions

hal-00105481 , version 1 (11-10-2006)

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  • HAL Id : hal-00105481 , version 1

Citer

T. Dang, Lorena Anghel, Régis Leveugle. CNTFET basics and simulation. Design and Test of Integrated Systems (DTIS'06), 2006, Tunis, Tunisia. pp.28-33. ⟨hal-00105481⟩

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