Electrical properties of short period InAs/GaSb superlattice.
Résumé
Electrical properties in the temperature range between 80K and 300K of type-II short period InAs/GaSb superlattice (SL) photodiode are reported. Resistivity and Hall measurements have been carried out on a 300 periods unintentionally doped SL grown on semi-insulating GaAs substrate while capacitance-voltage and electrical-voltage measurements have been performed on the same SL structure elaborated on n-type GaSb substrate. Whatever the electrical investigations, the behaviour of the InAs/GaSb SL versus tem-perature exhibited a reproducible change in type of conductivity. The SL is n-type at high temperatures range with n(300K) = 6x1016cm-3 whereas it is p-type at low temperatures with p(100K) = 2x1016cm-3.
Domaines
Optique / photonique
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