Study of doping in GaAs layers by local probe techniques : micro-Raman, micro-photoluminescence and cathodoluminescence - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2003

Study of doping in GaAs layers by local probe techniques : micro-Raman, micro-photoluminescence and cathodoluminescence

A.M. Ardilla
  • Fonction : Auteur
O. Martinez
  • Fonction : Auteur
M. Avella
  • Fonction : Auteur
L.F. Sanz
  • Fonction : Auteur
J. Jimenez

Résumé

The free carrier concentration of GaAs layers grown by MOCVD either on GaAs or Si substrates, by the conformal method in the last case, was obtained from the micro-Raman spectra using the hydrodynamic approach to fit the LO phonon-plasmon coupled Raman modes. The results on homoepitaxial layers were used as a calibration of the fitting method. The measurements in the selectively doped conformal layers were then compared with data obtained by micro-photoluminescence and cathodoluminescence spectroscopy and imaging. The doping data are compared with those deduced from the room temperature micro-photoluminescence and cathodolumiescence spectra.
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Dates et versions

hal-00101887 , version 1 (28-09-2006)

Identifiants

  • HAL Id : hal-00101887 , version 1

Citer

B. Gerard, Évelyne Gil-Lafon, J. Napierala, A.M. Ardilla, O. Martinez, et al.. Study of doping in GaAs layers by local probe techniques : micro-Raman, micro-photoluminescence and cathodoluminescence. 2003, pp.79. ⟨hal-00101887⟩

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