Optical characterization of GaAs/Si layers grown by the conformal method (confined lateral epitaxial growth) - Archive ouverte HAL
Article Dans Une Revue Journal of Materials Research Année : 2002

Optical characterization of GaAs/Si layers grown by the conformal method (confined lateral epitaxial growth)

Résumé

Optical cathodoluminescence studies of low dislocation density GaAs layers grown on Si by conformal hydride vapour phase epitaxy
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Dates et versions

hal-00101875 , version 1 (28-09-2006)

Identifiants

  • HAL Id : hal-00101875 , version 1

Citer

A.M. Ardilla, O. Martinez, M. Avella, J. Jimenez, J. Napierala, et al.. Optical characterization of GaAs/Si layers grown by the conformal method (confined lateral epitaxial growth). Journal of Materials Research, 2002, 17(6), pp.1341. ⟨hal-00101875⟩

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