Suspended-Gate Polysilicon Thin Film Transistor as Generic Structure for Highly Sensitive Charged Ambience Sensors - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2005
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hal-00086543 , version 1 (19-07-2006)

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  • HAL Id : hal-00086543 , version 1

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F. Bendriaa, France Le Bihan, Anne-Claire Salaün, Tayeb Mohammed-Brahim, Olivier Bonnaud. Suspended-Gate Polysilicon Thin Film Transistor as Generic Structure for Highly Sensitive Charged Ambience Sensors. ICST 2005, Intenational conference on sensing technology, 2005, New Zealand. ⟨hal-00086543⟩
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