Self-trapping of electrons at the field-effect junction of a molecular crystal - Archive ouverte HAL
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2003

Self-trapping of electrons at the field-effect junction of a molecular crystal

Résumé

We consider the interface of a molecular crystal with a polar dielectrics. Coulomb interaction of free electrons in the molecular crystal with surface polar phonons of the dielectrics can lead to self-trapping of carriers. For typical parameters of molecular field-effect transistors the binding energy is found to be high enough to allow for the formation of a strongly coupled polaron. The effect is further enhanced in the presence of a bias electric field.
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Dates et versions

hal-00012305 , version 1 (19-10-2005)

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Natacha Kirova, Marie-Noelle Bussac. Self-trapping of electrons at the field-effect junction of a molecular crystal. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68, pp.235312. ⟨10.1103/PhysRevB.68.235312⟩. ⟨hal-00012305⟩
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