Communication Dans Un Congrès Année : 1988

Gap state studies in a-Si/sub 1-x/Ge/sub x/:H alloys

Résumé

The changes in gap state density with increasing Ge concentration in glow-discharge a-Si/sub 1-x/Ge/sub x/:H alloys prepared under well controlled conditions are investigated by analyzing the optical transmission and photothermal deflection measurements. The results are correlated with those of electron spin resonance experiments. A model is proposed for the defect state density.

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hal-00008982 , version 1 (21-09-2005)

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  • HAL Id : hal-00008982 , version 1

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L. Chahad, M.L. Theye, Skandar Basrour, J.C. Bruyere, C. Godet, et al.. Gap state studies in a-Si/sub 1-x/Ge/sub x/:H alloys. Eighth-E.C.-Photovoltaic-Solar-Energy-Conference.-Proceedings-of-the-International-Conference-EUR-11780, 1988, Florence, Italy. pp.846-50. ⟨hal-00008982⟩
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