Gap state studies in a-Si/sub 1-x/Ge/sub x/:H alloys
Résumé
The changes in gap state density with increasing Ge concentration in glow-discharge a-Si/sub 1-x/Ge/sub x/:H alloys prepared under well controlled conditions are investigated by analyzing the optical transmission and photothermal deflection measurements. The results are correlated with those of electron spin resonance experiments. A model is proposed for the defect state density.