Study of hydrogen configurations by infrared spectroscopy, effusion and nuclear analysis in A-Si/sub x/Ge/sub y/H/sub z/ alloys - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 1989

Study of hydrogen configurations by infrared spectroscopy, effusion and nuclear analysis in A-Si/sub x/Ge/sub y/H/sub z/ alloys

Résumé

Infrared spectroscopy, thermal effusion, and nuclear analysis were used to perform a systematic investigation of hydrogen incorporation and types of bonding in glow discharge deposited a-Si/sub x/Ge/sub y/H/sub z/ thin films. The study is focused on samples with a low germanium content corresponding to an optical gap EO4 varying between 1.9 eV (a-SiH) and 1.6 eV (35% Ge). From infrared measurements the authors deduce the preferential attachment of hydrogen on Si or Ge atoms and the presence of polysilanes groups, according to the deposition conditions. They also propose a quantitative correlation between (SiH/sub 2/)n (n>or=1) concentrations deduced from IR stretching bands (2080-2090 cm/sup -1/) and weakly bonded hydrogen measured by thermal effusion.
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Dates et versions

hal-00008981 , version 1 (21-09-2005)

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  • HAL Id : hal-00008981 , version 1

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Skandar Basrour, J.C. Bruyere, Etienne Bustarret, C. Godet, J.P. Stoquert, et al.. Study of hydrogen configurations by infrared spectroscopy, effusion and nuclear analysis in A-Si/sub x/Ge/sub y/H/sub z/ alloys. Commission-of-the-European-Communities.-Ninth-E.C.-Photovoltaic-Solar-Energy-Conference.-Proceedings-of-the-International-Conference, 1989, Freiburg, Germany. pp.1010-12. ⟨hal-00008981⟩
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