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Journal Articles IEEE Transactions on Microwave Theory and Techniques Year : 1998

94 GHz pulsed silicon IMPATT oscillator modelling

Abstract

A new type of 94-GHz pulsed silicon impact avalanche and transit time (IMPATT) oscillator numerical modeling is described. It consists of a set of three models of increasing complexity; namely, a pure sine model, time-domain isothermal model, and time-domain electro-thermal model, which basically rely on a diode one-dimensional bipolar drift-diffusion model embedded in a time-domain circuit modeling. In this paper, they are first used to investigate the 94-GHz diode intrinsic operation and performance. Secondly, the load-impedance level has been optimized. In each case, the thermal behavior is especially considered. Thirdly, pulse-operation-simulation results are compared with experiments performed at Thomson CSF, Radars et Contre-Mesures, Elancourt, France. Finally, some improvements of the present modeling are discussed in Section VI.
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Dates and versions

hal-00005340 , version 1 (13-06-2005)

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Stéphane Beaussart, Olivier Perrin, Marie-Renée Friscourt, Christophe Dalle. 94 GHz pulsed silicon IMPATT oscillator modelling. IEEE Transactions on Microwave Theory and Techniques, 1998, 46, pp.1382-1390. ⟨10.1109/22.721139⟩. ⟨hal-00005340⟩
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