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Pré-Publication, Document De Travail Année : 2004

Electronic mechanism of ion expulsion under UV nanosecond laser excitation of silicon: Experiment and modeling

Résumé

We present experimental and modeling studies of UV nanosecond pulsed laser desorption and ablation of (111) bulk silicon. The results involve a new approach to the analysis of plume formation dynamics under high-energy photon irradiation of the semiconductor surface. Non-thermal, photo-induced desorption has been observed at low laser fluence, well below the melting threshold. Under ablation conditions, the non-thermal ions have also a high concentration. The origin of these ions is discussed on the basis of electronic excitation of Si surface states associated with the Coulomb explosion mechanism. We present a model describing dynamics of silicon target excitation, heating and harge-carrier transport.
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Dates et versions

hal-00001276 , version 1 (12-03-2004)
hal-00001276 , version 2 (13-03-2004)

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Wladimir Marine, Nadezhda Bulgakova, Lionel Patrone, Igor Ozerov. Electronic mechanism of ion expulsion under UV nanosecond laser excitation of silicon: Experiment and modeling. 2004. ⟨hal-00001276v1⟩
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