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Communication Dans Un Congrès Année : 2012

New Method of EMI analysis in power electronics based on semiconductors transient models: Application to SiC MOSFET/Schottky diode

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hal-01688430 , version 1 (19-01-2018)

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Slim Hrigua, Cyrille Gautier, François Costa, Bertrand Revol. New Method of EMI analysis in power electronics based on semiconductors transient models: Application to SiC MOSFET/Schottky diode. IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society, Oct 2012, Montreal, Canada. ⟨10.1109/IECON.2012.6388761⟩. ⟨hal-01688430⟩
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