BSIM3 parameters extraction of a 0.35 µm CMOS technology from 300K down to 77K - Archive ouverte HAL Access content directly
Journal Articles Journal of Physics: Conference Series Year : 2017

BSIM3 parameters extraction of a 0.35 µm CMOS technology from 300K down to 77K

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Abstract

In this work, we present a commercial 0.35 μm/3.3 V CMOS technology behaviour study of both linear and gate-enclosed transistors from room temperature down to 77 Kelvin. Cryogenic setup used to complete this study is first described. Measurement results are then discused and a model based on a BSIM3 parameters extraction is proposed.

Dates and versions

hal-01520241 , version 1 (10-05-2017)

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Cite

Laurent Varizat, Gérard Sou, Malik Mansour. BSIM3 parameters extraction of a 0.35 µm CMOS technology from 300K down to 77K. Journal of Physics: Conference Series, 2017, 834 (Conference : 1), ⟨10.1088/1742-6596/834/1/012002⟩. ⟨hal-01520241⟩
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