A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields - Laboratoire Charles Coulomb (L2C) Access content directly
Journal Articles npj Computational Materials Year : 2023

A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields

Péter Udvarhelyi
Tristan Clua-Provost
  • Function : Author
Alrik Durand
  • Function : Author
Jiahan Li
  • Function : Author
James Edgar
Bernard Gil
  • Function : Author
Guillaume Cassabois
  • Function : Author
Adam Gali

Abstract

The boron-vacancy spin defect (V − B) in hexagonal boron nitride (hBN) has a great potential as a quantum sensor in a two-dimensional material that can directly probe various external perturbations in atomic-scale proximity to the quantum sensing layer. Here, we apply first principles calculations to determine the coupling of the V − B electronic spin to strain and electric fields. Our work unravels the interplay between local piezoelectric and elastic effects contributing to the final response to the electric fields. The theoretical predictions are then used to analyse optically detected magnetic resonance (ODMR) spectra recorded on hBN crystals containing different densities of V − B centres. We prove that the orthorhombic zero-field splitting parameter results from local electric fields produced by surrounding charge defects. By providing calculations of the spin-strain and spin-electric field couplings, this work paves the way towards applications of V − B centres for quantitative electric field imaging and quantum sensing under pressure.
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Dates and versions

hal-04258308 , version 1 (25-10-2023)

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Péter Udvarhelyi, Tristan Clua-Provost, Alrik Durand, Jiahan Li, James Edgar, et al.. A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields. npj Computational Materials, 2023, 9 (1), pp.150. ⟨10.1038/s41524-023-01111-7⟩. ⟨hal-04258308⟩
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