Massless Dirac fermions in III-V semiconductor quantum wells - Laboratoire Charles Coulomb (L2C) Accéder directement au contenu
Article Dans Une Revue Physical Review B Année : 2019

Massless Dirac fermions in III-V semiconductor quantum wells

W. Desrat
Benoit Jouault
F. Teppe

Résumé

We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau level fan chart by magnetotransport and unequivocally demonstrate a gapless state in our sample. Measurements of cyclotron resonance at different electron concentrations directly indicate a linear band crossing at the point of the Brillouin zone. Analysis of experimental data within an analytical Dirac-like Hamiltonian allows us not only to determine the velocity (v F = 1.8 × 10 5 m/s) of massless Dirac fermions, but also to demonstrate a significant nonlinear dispersion at high energies.
Fichier principal
Vignette du fichier
Krishtopenko S.,PhysRevB.99.121405.pdf (1.45 Mo) Télécharger le fichier
Origine Fichiers éditeurs autorisés sur une archive ouverte
Loading...

Dates et versions

hal-02072785 , version 1 (08-04-2019)

Identifiants

Citer

Sergey S. Krishtopenko, W. Desrat, K. Spirin, C. Consejo, S. Ruffenach, et al.. Massless Dirac fermions in III-V semiconductor quantum wells. Physical Review B, 2019, 99 (12), pp.121405. ⟨10.1103/PhysRevB.99.121405⟩. ⟨hal-02072785⟩
184 Consultations
201 Téléchargements

Altmetric

Partager

Gmail Mastodon Facebook X LinkedIn More