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Poster De Conférence Année : 2016

Scanning tunneling microscopy investigation of GaP MBE growth on nominal and vicinal Si(001) substrates for optoelectronic applications

Résumé

We present a detailed scanning tunneling microscopy (STM) study of GaP(001) MBE growth on nominal and vicinal Si(001) substrates. Antiphase domains and antiphase boundaries (APBs) are observed with atomic resolution. APBs annihilation is promoted on vicinal substrates. The use of Si(001) vicinal substrates also induces major modification of the growth front morphology (roughness, antiphase domain size and shape, terminal facets) from the early deposition stages, up to thick GaP layers. This study gives new and valuable hints on APBs annihilation mechanisms.
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Dates et versions

hal-01496729 , version 1 (27-03-2017)

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  • HAL Id : hal-01496729 , version 1

Citer

Simon Charbonnier, Ida Lucci, S. Gangopadhyay, Yanping Wang, Tony Rohel, et al.. Scanning tunneling microscopy investigation of GaP MBE growth on nominal and vicinal Si(001) substrates for optoelectronic applications. 19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France. ⟨hal-01496729⟩
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