Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 µm laser applications studied by magnetophotoluminescence - Foton - Fonctions Optiques pour les Technologies de l'informatiON
Article Dans Une Revue Applied Physics Letters Année : 2005

Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 µm laser applications studied by magnetophotoluminescence

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hal-00504390 , version 1 (20-07-2010)

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Charles Cornet, Christophe Levallois, Philippe Caroff, Hervé Folliot, Christophe Labbé, et al.. Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 µm laser applications studied by magnetophotoluminescence. Applied Physics Letters, 2005, 87, pp.233111. ⟨10.1063/1.2132527⟩. ⟨hal-00504390⟩
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