Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 µm laser applications studied by magnetophotoluminescence - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2005

Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 µm laser applications studied by magnetophotoluminescence

Dates et versions

hal-00504390 , version 1 (20-07-2010)

Identifiants

Citer

Charles Cornet, Christophe Levallois, Philippe Caroff, Hervé Folliot, Christophe Labbé, et al.. Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 µm laser applications studied by magnetophotoluminescence. Applied Physics Letters, 2005, 87, pp.233111. ⟨10.1063/1.2132527⟩. ⟨hal-00504390⟩
59 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More