@phdthesis{brossard:tel-00200095, TITLE = {{Epitaxies Si/SiGe(C) pour transistors bipolaires avanc{\'e}s}}, AUTHOR = {Brossard, Florence}, URL = {https://theses.hal.science/tel-00200095}, SCHOOL = {{Universit{\'e} Joseph-Fourier - Grenoble I}}, YEAR = {2007}, MONTH = May, KEYWORDS = {Heterojunction bipolar transistor ; selective epitaxial growth ; SiGe ; carbon ; silicon nitride ; photoluminescence at room temperature ; Transistor bipolaire {\`a} h{\'e}t{\'e}rojonction ; {\'e}pitaxie s{\'e}lective ; carbone ; nitrure de silicium ; photoluminescence {\`a} temp{\'e}rature ambiante}, TYPE = {Theses}, PDF = {https://theses.hal.science/tel-00200095/file/Florence_Brossard-manuscrit_these.pdf}, HAL_ID = {tel-00200095}, HAL_VERSION = {v1}, }