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On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation

D. Querlioz , Jérôme Saint-Martin , K. Huet , A. Bournel , V. Aubry-Fortuna et al.
IEEE Transactions on Electron Devices, 2007, 54 (9), pp.2232 - 2242. ⟨10.1109/TED.2007.902713⟩
Journal articles hal-01909433v1

Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder

D. Querlioz , Y. Apertet , A. Valentin , K. Huet , A. Bournel et al.
Applied Physics Letters, 2008, 92 (4), pp.042108. ⟨10.1063/1.2838354⟩
Journal articles hal-02452618v1
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Dimensionnement et performances potentielles des MISFET à hétérojonction

P. Dollfus , M. Mouis , R. Castagné
Revue de Physique Appliquée, 1989, 24 (1), pp.65-69. ⟨10.1051/rphysap:0198900240106500⟩
Journal articles istex jpa-00246030v1

Electrical excitation of surface phonon-polaritons in III-V heterostructures: a Monte Carlo study

Fulvio Mazzamuto , Jérôme Saint-Martin , Arnaud Bournel , P. Dollfus , Alexandre Archambault et al.
Journal of Physics: Conference Series, 2009, 193 (1), pp.012015. ⟨10.1088/1742-6596/193/1/012015⟩
Journal articles hal-00574368v1
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Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications

Ming Shi , Jérôme Saint-Martin , Arnaud Bournel , Damien Querlioz , Nicolas Wichmann et al.
Solid-State Electronics, 2013, 87, pp.51 - 57. ⟨10.1016/j.sse.2013.05.004⟩
Journal articles hal-01910206v1
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Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects

P. Dollfus , P. Hesto , S. Galdin , C. Brisset
Journal de Physique III, 1993, 3 (9), pp.1719-1728. ⟨10.1051/jp3:1993232⟩
Journal articles istex jpa-00249033v1
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Etude Monte-Carlo du transport dans un gaz d'électrons bidimensionnel dégénéré

M. Mouis , P. Dollfus , R. Castagné
Revue de Physique Appliquée, 1989, 24 (2), pp.183-188. ⟨10.1051/rphysap:01989002402018300⟩
Journal articles istex jpa-00246040v1

High performance WTe2-MoS2in-plane heterojunction Tunnel Field Effect Transistors

Marco G. Pala , Jean Choukroun , Shiang Fang , Efthimios Kaxiras , Philippe Dollfus et al.
48th European Solid-State Device Research Conference (ESSDERC 2018), Sep 2018, Dresden, France. pp.42-45, ⟨10.1109/ESSDERC.2018.8486869⟩
Conference papers hal-02351006v1
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Efficient multi sub-band Monte Carlo simulation of nano-scaled Double Gate MOSFETs

Jérôme Saint-Martin , Damien Querlioz , Arnaud Bournel , Philippe Dollfus
2006 International Conference on Simulation of Semiconductor Processes and Devices, Sep 2006, Monterey, United States. ⟨10.1109/SISPAD.2006.282875⟩
Conference papers hal-01827057v1
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Electro-thermal simulation based on coupled Boltzmann transport equations for electrons and phonons

T. Nghiem , Jérôme Saint-Martin , P. Dollfus
Journal of Computational Electronics, 2016, 15 (1), pp.3 - 15. ⟨10.1007/s10825-015-0773-2⟩
Journal articles hal-01906694v1

Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design

Sebastien Fregonese , Hughes Cazin d'Honincthun , Johnny Goguet , Cristell Maneux , Thomas Zimmer et al.
IEEE Transactions on Electron Devices, 2008, 55 (6), pp.1317-1326
Journal articles hal-00287142v1
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Modeling of SPAD avalanche breakdown probability and jitter tail with field lines

Rémi Helleboid , Denis Rideau , Jeremy Grebot , Isobel Nicholson , Norbert Moussy et al.
Solid-State Electronics, 2022, 194, pp.108376. ⟨10.1016/j.sse.2022.108376⟩
Journal articles hal-03793952v1
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Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation

Philippe Dollfus , Jérôme Saint-Martin , T. Cazimajou , R. Helleboid , A. Pilotto et al.
Solid-State Electronics, 2022, 194, pp.108361. ⟨10.1016/j.sse.2022.108361⟩
Journal articles hal-03793955v1

Dispersive hybrid states and bandgap in zigzag graphene/BN heterostructures

Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus
Semiconductor Science and Technology, 2015, 30 (10), ⟨10.1088/0268-1242/30/10/105002⟩
Journal articles hal-01909498v1

Enhanced Seebeck effect in graphene devices by strain and doping engineering

Mai-Chung Nguyen , Viet-Hung Nguyen , Huy-Viet Nguyen , Jérôme Saint-Martin , Philippe Dollfus et al.
High Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam
Conference papers hal-01952016v1

Heat Transport in Silicon Nanowires within Full-Band Phonon Monte Carlo approach

B. Davier , J. Larroque , P. Dollfus , Jérôme Saint-Martin
High Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam
Conference papers hal-01952013v1
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Ab initio based calculations of the thermal conductivity at the micron scale

Laurent Chaput , Jérôme Larroque , Philippe Dollfus , Jérôme Saint-Martin , David Lacroix et al.
Applied Physics Letters, 2018, 112 (3), pp.033104. ⟨10.1063/1.5010959⟩
Journal articles hal-01689364v1
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Revisiting thermal conductivity and interface conductance at the nanoscale

Brice Davier , Philippe Dollfus , N.D. Le , S. Volz , J. Shiomi et al.
International Journal of Heat and Mass Transfer, 2022, 183 (Part A), pp.122056. ⟨10.1016/j.ijheatmasstransfer.2021.122056⟩
Journal articles hal-03859204v1

Strain-induced conduction gap in vertical devices made of misoriented graphene layers

V Hung Nguyen , Huy-Viet Nguyen , Jérôme Saint-Martin , P. Dollfus
Nanotechnology, 2015, 26 (11), ⟨10.1088/0957-4484/26/11/115201⟩
Journal articles hal-01909504v1
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Learning with memristive devices: How should we model their behavior?

Damien Querlioz , Philippe Dollfus , Olivier Bichler , Christian Gamrat
2011 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jun 2011, San Diego, United States. ⟨10.1109/NANOARCH.2011.5941497⟩
Conference papers hal-01827056v1

Device performance and optimization of decananometer long double gate MOSFET by Monte Carlo simulation

A. Bournel , V. Aubry-Fortuna , J. Saint-Martin , P. Dollfus
Solid-State Electronics, 2007, 51 (4), pp.543-550. ⟨10.1016/j.sse.2007.02.010⟩
Journal articles istex hal-02452609v1

Analyse de la mobilité dans les transistors nanométriques

J. Pousset , J.-F. Millithaler , C. Palermo , L. Varani , P. Dollfus et al.
Journées Nationales du Réseau Doctorale en Microélectronique, 2006, Rennes, France
Conference papers hal-02442777v1
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Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes

Y. Oussaiti , D. Rideau , J.R. Manouvrier , V. Quenette , H. Wehbe-Alause et al.
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.145-148, ⟨10.23919/SISPAD49475.2020.9241648⟩
Conference papers hal-03029924v1
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Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices

Remi Helleboid , Denis Rideau , Jeremy Grebot , Isobel Nicholson , Norbert Moussy et al.
IEEE Journal of the Electron Devices Society, 2022, 10, pp.584-592. ⟨10.1109/JEDS.2022.3168365⟩
Journal articles hal-03794480v1

Étude de la mobilité effective dans les DG MOSFET quasi-balistiques

K. Huet , J. Saint-Martin , A. Bournel , G. Ghibaudo , P. Dollfus et al.
xxxx, 2006, Grenoble, France. pp.XX
Conference papers hal-00148265v1

Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors

Alfonso Alarcón , Viet-Hung Nguyen , Salim Berrada , Damien Querlioz , Jérôme Saint-Martin et al.
IEEE Transactions on Electron Devices, 2013, 60 (3), pp.985-991
Journal articles hal-01951940v1

Full Band Ab-Initio Monte Carlo simulation of heat transfer in nanostructures

B. Davier , J. Larroque , Philippe Dollfus , Laurent Chaput , S. Volz et al.
Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland
Conference papers hal-01951979v1
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Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas

Jérôme Saint-Martin , A. Bournel , F Monsef , C. Chassat , P. Dollfus et al.
Semiconductor Science and Technology, 2006, 21 (4), pp.L29 - L31. ⟨10.1088/0268-1242/21/4/L01⟩
Journal articles istex hal-01909484v1
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Fully quantum self-consistent study of ultimate DG-MOSFETs including realistic scattering using a Wigner Monte-Carlo approach

D. Querlioz , J. Saint-Martin , V.-N. Do , A. Bournel , P. Dollfus et al.
2006 International Electron Devices Meeting, Dec 2006, San Francisco, United States. ⟨10.1109/IEDM.2006.346939⟩
Conference papers hal-01827054v1

Plasmonic noise in Si and InGaAs semiconductor nanolayers

J. Pousset , J-F Millithaler , L. Reggiani , G. Sabatini , C. Palermo et al.
16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures (EDISON), L. Varani, 2009, Montpellier, France. pp.012091, ⟨10.1088/1742-6596/193/1/012091⟩
Conference papers hal-02443121v1