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Investigation of Al y Ga1− y N/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters
Julien Brault
,
Samuel Matta
,
Thi Huong Ngo
,
Maxim Korytov
,
Daniel Rosales
et al.
Journal articles
hal-01382466v1
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Photoassisted chemical smoothing of AlGaN surface after laser lift-off
Zhongming Zheng
,
Hao Long
,
Samuel Matta
,
Mathieu Leroux
,
Julien Brault
et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2020, 38 (4), pp.042207. ⟨10.1116/6.0000192⟩
Journal articles
hal-02931570v1
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UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dot
Julien Brault
,
Mohamed Al Khalfioui
,
Samuel Matta
,
Thi Huong Ngo
,
S. Chenot
et al.
Journal articles
hal-03030472v1
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Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges
Julien Brault
,
Samuel Matta
,
Thi Huong Ngo
,
Mohamed Al Khalfioui
,
Pierre Valvin
et al.
Journal articles
hal-02380035v1
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Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission
Samuel Matta
,
Julien Brault
,
Thi Huong Ngo
,
B. Damilano
,
Maxim Korytov
et al.
Journal articles
hal-01579358v1
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Ultraviolet light emitting diodes using III-N quantum dots
Julien Brault
,
Samuel Matta
,
Thi Huong Ngo
,
Daniel Rosales
,
Mathieu Leroux
et al.
Journal articles
hal-01390773v1
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Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters
Guido Schifani
,
Thomas Frisch
,
Julien Brault
,
Philippe Vennegues
,
Samuel Matta
et al.
Journal articles
hal-02883981v1
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Growth of GaN Nanostructures with Polar and Semipolar Orientations for the Fabrication of UV LEDs
Julien Brault
,
B. Damilano
,
Daniel Rosales
,
Thierry Bretagnon
,
Bernard Gil
et al.
SPIE GALLIUM NITRIDE MATERIALS AND DEVICES IX, Feb 2014, san francisco, United States. pp.89860Z, ⟨10.1117/12.2036924⟩
Conference papers
hal-01021435v1
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Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors
Thi Huong Ngo
,
Rémi Comyn
,
Sébastien Chenot
,
Julien Brault
,
Benjamin Damilano
et al.
Journal articles
hal-03035072v1
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Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature
C. Sgroi
,
J. Brault
,
J.-Y. Duboz
,
S. Chenot
,
P. Vennéguès
et al.
Journal articles
hal-03784787v1
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Hétérostructures nitrures d'éléments III réalisées par épitaxie par jets moléculaires et application aux diodes électroluminescentes
Julien Brault
Matériaux. Université Côte d'Azur, France; UFR Sciences - Ecole Doctorale de Sciences Fondamentales et Appliquées, 2018
Habilitation à diriger des recherches
tel-02531407v1
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Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors
Thi Huong Ngo
,
Rémi Comyn
,
Sébastien Chenot
,
Julien Brault
,
Benjamin Damilano
et al.
Journal articles
hal-03467546v1
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Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters
Julien Brault
,
Daniel Rosales
,
B. Damilano
,
Mathieu Leroux
,
A Courville
et al.
Journal articles
hal-01025116v1
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Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE
Samuel Matta
,
Julien Brault
,
Maxim Korytov
,
Phuong Vuong
,
C. Chaix
et al.
Journal articles
hal-01863559v1
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UVA and UVB light emitting diodes with AlyGa1-yN quantum dot active regions covering the 305-335 nm range
Julien Brault
,
M. Al Khalfioui
,
Samuel Matta
,
B. Damilano
,
Mathieu Leroux
et al.
Journal articles
hal-01863551v1
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Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature
C A Sgroi
,
J. Brault
,
J.-Y. Duboz
,
S. Chenot
,
P. Vennéguès
et al.
Journal articles
hal-03828253v1
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Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors
Thi Huong Ngo
,
Rémi Comyn
,
Sébastien Chenot
,
Julien Brault
,
Maud Nemoz
et al.
Journal articles
hal-03741626v1
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A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures
Jong-Hoi Cho
,
Seung-Hyuk Lim
,
Min-Ho Jang
,
Chulwon Lee
,
Hwan-Seop Yeo
et al.
Journal articles
hal-03035081v1
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The Effect of Inductively Coupled Plasma Etching on the I – V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure
Xingzhao Wu
,
Lai Wang
,
Zhibiao Hao
,
Yanjun Han
,
Changzheng Sun
et al.
Journal articles
hal-03035090v1
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A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures
Jong-Hoi Cho
,
Seung-Hyuk Lim
,
Min-Ho Jang
,
Chulwon Lee
,
Hwan-Seop Yeo
et al.
Journal articles
hal-03034181v1
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Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity
Loubnan Abou-Hamdan
,
Sobhi Hamyeh
,
Abdo Iskandar
,
Rabih Taul
,
Julien Brault
et al.
Journal articles
hal-03035066v1
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Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape
B. Damilano
,
Marie Lesecq
,
Di Zhou
,
Éric Frayssinet
,
Sebastien Chenot
et al.
Journal articles
hal-02304909v1
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