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Investigation of Al y Ga1− y N/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters

Julien Brault , Samuel Matta , Thi Huong Ngo , Maxim Korytov , Daniel Rosales et al.
Japanese Journal of Applied Physics, 2016, 55, pp.05FG06. ⟨10.7567/JJAP.55.05FG06⟩
Journal articles hal-01382466v1

Photoassisted chemical smoothing of AlGaN surface after laser lift-off

Zhongming Zheng , Hao Long , Samuel Matta , Mathieu Leroux , Julien Brault et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2020, 38 (4), pp.042207. ⟨10.1116/6.0000192⟩
Journal articles hal-02931570v1
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UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dot

Julien Brault , Mohamed Al Khalfioui , Samuel Matta , Thi Huong Ngo , S. Chenot et al.
Crystals, 2020, 10 (12), pp.1097. ⟨10.3390/cryst10121097⟩
Journal articles hal-03030472v1
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Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

Julien Brault , Samuel Matta , Thi Huong Ngo , Mohamed Al Khalfioui , Pierre Valvin et al.
Journal of Applied Physics, 2019, 126 (20), pp.205701. ⟨10.1063/1.5115593⟩
Journal articles hal-02380035v1

Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission

Samuel Matta , Julien Brault , Thi Huong Ngo , B. Damilano , Maxim Korytov et al.
Journal of Applied Physics, 2017, 122, pp.085706. ⟨10.1063/1.5000238⟩
Journal articles hal-01579358v1

Ultraviolet light emitting diodes using III-N quantum dots

Julien Brault , Samuel Matta , Thi Huong Ngo , Daniel Rosales , Mathieu Leroux et al.
Materials Science in Semiconductor Processing, 2016, 55, pp.95. ⟨10.1016/j.mssp.2016.02.014⟩
Journal articles hal-01390773v1
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Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters

Guido Schifani , Thomas Frisch , Julien Brault , Philippe Vennegues , Samuel Matta et al.
ACS Applied Nano Materials, 2020, 3 (5), pp.4054-4060. ⟨10.1021/acsanm.9b02546⟩
Journal articles hal-02883981v1

Growth of GaN Nanostructures with Polar and Semipolar Orientations for the Fabrication of UV LEDs

Julien Brault , B. Damilano , Daniel Rosales , Thierry Bretagnon , Bernard Gil et al.
SPIE GALLIUM NITRIDE MATERIALS AND DEVICES IX, Feb 2014, san francisco, United States. pp.89860Z, ⟨10.1117/12.2036924⟩
Conference papers hal-01021435v1
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Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

Thi Huong Ngo , Rémi Comyn , Sébastien Chenot , Julien Brault , Benjamin Damilano et al.
Semiconductor Science and Technology, 2021, 36 (2), pp.024001. ⟨10.1088/1361-6641/abcbd3⟩
Journal articles hal-03035072v1

Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature

C. Sgroi , J. Brault , J.-Y. Duboz , S. Chenot , P. Vennéguès et al.
Applied Physics Letters, 2022, 120 (1), pp.012105. ⟨10.1063/5.0073864⟩
Journal articles hal-03784787v1
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Hétérostructures nitrures d'éléments III réalisées par épitaxie par jets moléculaires et application aux diodes électroluminescentes

Julien Brault
Matériaux. Université Côte d'Azur, France; UFR Sciences - Ecole Doctorale de Sciences Fondamentales et Appliquées, 2018
Habilitation à diriger des recherches tel-02531407v1
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Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo , Rémi Comyn , Sébastien Chenot , Julien Brault , Benjamin Damilano et al.
Solid-State Electronics, 2022, 188, pp.108210. ⟨10.1016/j.sse.2021.108210⟩
Journal articles hal-03467546v1

Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters

Julien Brault , Daniel Rosales , B. Damilano , Mathieu Leroux , A Courville et al.
Semiconductor Science and Technology, 2014, 29, pp.084001. ⟨10.1088/0268-1242/29/8/084001⟩
Journal articles hal-01025116v1

Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Samuel Matta , Julien Brault , Maxim Korytov , Phuong Vuong , C. Chaix et al.
Journal of Crystal Growth, 2018, 499, pp.40. ⟨10.1016/j.jcrysgro.2018.07.023⟩
Journal articles hal-01863559v1
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UVA and UVB light emitting diodes with AlyGa1-yN quantum dot active regions covering the 305-335 nm range

Julien Brault , M. Al Khalfioui , Samuel Matta , B. Damilano , Mathieu Leroux et al.
Semiconductor Science and Technology, 2018, 33 (7), pp.075007. ⟨10.1088/1361-6641/aac3bf⟩
Journal articles hal-01863551v1
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Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature

C A Sgroi , J. Brault , J.-Y. Duboz , S. Chenot , P. Vennéguès et al.
Applied Physics Letters, 2022, 120 (1), pp.012105. ⟨10.1063/5.0073864⟩
Journal articles hal-03828253v1

Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo , Rémi Comyn , Sébastien Chenot , Julien Brault , Maud Nemoz et al.
Journal of Crystal Growth, 2022, 593, pp.126779. ⟨10.1016/j.jcrysgro.2022.126779⟩
Journal articles hal-03741626v1

A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures

Jong-Hoi Cho , Seung-Hyuk Lim , Min-Ho Jang , Chulwon Lee , Hwan-Seop Yeo et al.
Nanoscale Advances, 2020, 2 (4), pp.1449-1455. ⟨10.1039/D0NA00052C⟩
Journal articles hal-03035081v1

The Effect of Inductively Coupled Plasma Etching on the I – V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure

Xingzhao Wu , Lai Wang , Zhibiao Hao , Yanjun Han , Changzheng Sun et al.
physica status solidi (a), 2019, 216 (24), pp.1900655. ⟨10.1002/pssa.201900655⟩
Journal articles hal-03035090v1
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A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures

Jong-Hoi Cho , Seung-Hyuk Lim , Min-Ho Jang , Chulwon Lee , Hwan-Seop Yeo et al.
Nanoscale Advances, 2020, 2 (4), pp.1449-1455. ⟨10.1039/d0na00052c⟩
Journal articles hal-03034181v1

Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity

Loubnan Abou-Hamdan , Sobhi Hamyeh , Abdo Iskandar , Rabih Taul , Julien Brault et al.
Nanotechnology, 2020, ⟨10.1088/1361-6528/abce79⟩
Journal articles hal-03035066v1
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Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape

B. Damilano , Marie Lesecq , Di Zhou , Éric Frayssinet , Sebastien Chenot et al.
IEEE Photonics Technology Letters, 2018, 30 (17), pp.1567-1570. ⟨10.1109/LPT.2018.2858000⟩
Journal articles hal-02304909v1