Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation
Daniela Munteanu
,
Jean-Luc Autran
,
Sebastien Martinie
A. Hashim.
Nanowires - Implementations and Applications , INTECH, pp.201-222, 2011, 978-953-307-563-1.
⟨10.5772/16827⟩
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hal-02121221v1
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Computational Modeling and Monte Carlo Simulation of Soft Errors in Flash Memories
Jean-Luc Autran
,
Daniela Munteanu
,
Philippe Roche
,
Gilles Gasiot
J. Awrejcewicz.
Computational and Numerical Simulations , INTECH, pp.367-392, 2014, 978-953-51-1220-4.
⟨10.5772/57220⟩
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hal-02119483v1
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Accurate Resolution of Time-Dependent and Circuit-Coupled Charge Transport Equations: 1-D Case Applied to 28-nm FD-SOI Devices
Victor Malherbe
,
Gilles Gasiot
,
Thomas Thery
,
Jean-Luc Autran
,
Philippe Roche
Journal articles
hal-02111080v1
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Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study
K. Nehari
,
N. Cavassilas
,
Jean-Luc Autran
,
M. Bescond
,
Daniela Munteanu
,
et al.
Journal articles
istex
hal-02132134v1
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Characterization of atmospheric muons at sea level using a cosmic ray telescope
Jean-Luc Autran
,
Daniela Munteanu
,
Tarek Saad Saoud
,
Soilihi Moindjie
Journal articles
hal-01846825v1
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Impact of Total Ionizing Dose on the alpha-Soft Error Rate in FDSOI 28 nm SRAMs
Soilihi Moindjie
,
Daniela Munteanu
,
Jean-Luc Autran
,
Victor Malherbe
,
Gilles Gasiot
,
et al.
Journal articles
hal-04194288v1
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Investigation of 30nm Gate-All-Around MOSFET Sensitivity to Heavy Ions: a 3-D Simulation Study
K. Castellani-Coulié
,
Daniela Munteanu
,
Jean-Luc Autran
,
V. Ferlet-Cavrois
,
P. Paillet
,
et al.
2005 8th European Conference on Radiation and Its Effects on Components and Systems , Sep 2005, Cap d'Agde, France. pp.G1-1-G1-8
Conference papers
hal-02025580v1
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Simulation Analysis of Quantum Confinement and Short-Channel Effects in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors
Mathieu Moreau
,
Daniela Munteanu
,
Jean-Luc Autran
Journal articles
hal-01745615v1
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Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation
Daniela Munteanu
,
Jean-Luc Autran
,
S. Moindjie
Journal articles
hal-01693979v1
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Behavioral modeling of SRIM tables for numerical simulation
S. Martinie
,
T. Saad-Saoud
,
S. Moindjie
,
Daniela Munteanu
,
Jean-Luc Autran
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 2014, 322, pp.2-6.
⟨10.1016/j.nimb.2013.12.023⟩
Journal articles
hal-01430076v1
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Real-time soft-error rate measurements: A review
Jean-Luc Autran
,
Daniela Munteanu
,
P. Roche
,
G. Gasiot
Journal articles
hal-01430077v1
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Technology Downscaling Worsening Radiation Effects in Bulk: SOI to the Rescue
Philippe Roche
,
Jean-Luc Autran
,
Gilles Gasiot
,
Daniela Munteanu
Conference papers
hal-01430081v1
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Real-Time Soft-Error Testing of 40nm SRAMs
Jean-Luc Autran
,
S. Serre
,
Daniela Munteanu
,
S. Martinie
,
S. Semikh
,
et al.
Conference papers
hal-01430086v1
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A Review of Real-Time Soft-Error Rate Measurements in Electronic Circuits
Jean-Luc Autran
,
Daniela Munteanu
,
S. Serre
,
S. Sauze
Conference papers
hal-01430087v1
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Analytical Modeling of Alpha-Particle Emission Rate at Wafer-Level
Sébastien Martinie
,
Jean-Luc Autran
,
Daniela Munteanu
,
Frédéric Wrobel
,
Michael Gedion
,
et al.
Journal articles
hal-01430100v1
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Experimental Investigation on the Quasi-Ballistic Transport: Part II-Backscattering Coefficient Extraction and Link With the Mobility
Vincent Barral
,
Thierry Poiroux
,
Daniela Munteanu
,
Jean-Luc Autran
,
Simon Deleonibus
Journal articles
hal-01430104v1
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Poly-gate replacement through contact hole (PRETCH): A new method for high-K/metal gate and multi-oxide implementation on chip
S Harrison
,
P Coronel
,
A Cros
,
R Cerutti
,
F Leverd
,
et al.
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST , 2004, Unknown, Unknown Region. pp.291-294,
⟨10.1109/IEDM.2004.1419136⟩
Conference papers
hal-01759469v1
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3-D Quantum Numerical Simulation of Transient Response in Multiple-Gate Nanowire MOSFETs Submitted to Heavy Ion Irradiation
Daniela Munteanu
,
Jean-Luc Autran
L. Angermann.
Numerical Simulations, Applications, Examples and Theory , INTECH, pp.67-88, 2011, 978-953-307-440-5.
⟨10.5772/13231⟩
Book sections
hal-02121229v1
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A New Unified Compact Model for Quasi-Ballistic Transport: Application to the Analysis of Circuit Performances of a Double-Gate Architecture
S. Martinie
,
Daniela Munteanu
,
G. Le Carval
,
Jean-Luc Autran
SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES , 2008, Unknown, Unknown Region. pp.377+,
⟨10.1109/SISPAD.2008.4648316⟩
Conference papers
hal-01759430v1
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Experimental determination of the channel backscattering coefficient on 10-70 nm-metal-gate, Double-Gate transistors
Vincent Barral
,
T. Poiroux
,
M. Vinet
,
J. Widiez
,
B. Previtali
,
et al.
Journal articles
istex
hal-01759440v1
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Altitude SEE test European platform (ASTEP) and first results in CMOS 130 nm SRAM
Jean-Luc Autran
,
Philippe Roche
,
Joseph Borel
,
Christophe Sudre
,
Karine Castellani-Coulie
,
et al.
Journal articles
hal-01759445v1
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Quantum short-channel compact modelling of drain-current in double-gate MOSFET
Daniela Munteanu
,
Jean-Luc Autran
,
Xavier Loussier
,
Samuel Harrison
,
Robin Cerutti
,
et al.
Journal articles
istex
hal-01759446v1
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Performance degradation induced by fringing field-induced barrier lowering and parasitic charge in double-gate metal-oxide-semiconductor field-effect transistors with high-kappa dielectrics
Jean-Luc Autran
,
Daniela Munteanu
,
M Houssa
,
K Castellani-Coulie
,
A Said
Journal articles
hal-01759458v1
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Compact model of the quantum short-channel threshold voltage in symmetric Double-Gate MOSFET
Daniela Munteanu
,
Jean-Luc Autran
,
S Harrison
,
K Nehari
,
O Tintori
,
et al.
Journal articles
hal-01759460v1
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3D quantum modeling and simulation of multiple-gate nanowire MOSFETs
M Bescond
,
K Nehari
,
Jean-Luc Autran
,
N Cavassilas
,
Daniela Munteanu
,
et al.
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST , 2004, Unknown, Unknown Region. pp.617-620,
⟨10.1109/IEDM.2004.1419237⟩
Conference papers
hal-01759466v1
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Modeling of quantum ballistic transport in double-gate devices with ultra-thin oxides
Daniela Munteanu
,
Jean-Luc Autran
,
E Decarre
,
R Dinescu
Journal articles
istex
hal-01759475v1
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Random-Walk Drift-Diffusion Charge-Collection Model For Reverse-Biased Junctions Embedded in Circuits
M. Glorieux
,
Jean-Luc Autran
,
Daniela Munteanu
,
S. Clerc
,
G. Gasiot
,
et al.
Journal articles
hal-01430079v1
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Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits
Jean-Luc Autran
,
M. Glorieux
,
Daniela Munteanu
,
S. Clerc
,
G. Gasiot
,
et al.
Journal articles
hal-01430080v1
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Physics-Based Analytical Modeling of Quasi-Ballistic Transport in Double-Gate MOSFETs: From Device to Circuit Operation
Sébastien Martinie
,
Daniela Munteanu
,
Gilles Le Carval
,
Jean-Luc Autran
Journal articles
hal-01430108v1
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SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation
Daniela Munteanu
,
Jean-Luc Autran
Journal articles
hal-01429427v1
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