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Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation

Daniela Munteanu , Jean-Luc Autran , Sebastien Martinie
A. Hashim. Nanowires - Implementations and Applications, INTECH, pp.201-222, 2011, 978-953-307-563-1. ⟨10.5772/16827⟩
Book sections hal-02121221v1

Computational Modeling and Monte Carlo Simulation of Soft Errors in Flash Memories

Jean-Luc Autran , Daniela Munteanu , Philippe Roche , Gilles Gasiot
J. Awrejcewicz. Computational and Numerical Simulations, INTECH, pp.367-392, 2014, 978-953-51-1220-4. ⟨10.5772/57220⟩
Book sections hal-02119483v1
Image document

Accurate Resolution of Time-Dependent and Circuit-Coupled Charge Transport Equations: 1-D Case Applied to 28-nm FD-SOI Devices

Victor Malherbe , Gilles Gasiot , Thomas Thery , Jean-Luc Autran , Philippe Roche
IEEE Transactions on Nuclear Science, 2018, 65 (1), pp.331-338. ⟨10.1109/TNS.2017.2774960⟩
Journal articles hal-02111080v1

Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study

K. Nehari , N. Cavassilas , Jean-Luc Autran , M. Bescond , Daniela Munteanu , et al.
Solid-State Electronics, 2006, 50 (4), pp.716-721. ⟨10.1016/j.sse.2006.03.041⟩
Journal articles istex hal-02132134v1
Image document

Characterization of atmospheric muons at sea level using a cosmic ray telescope

Jean-Luc Autran , Daniela Munteanu , Tarek Saad Saoud , Soilihi Moindjie
Nucl.Instrum.Meth.A, 2018, 903, pp.77-84. ⟨10.1016/j.nima.2018.06.038⟩
Journal articles hal-01846825v1
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Impact of Total Ionizing Dose on the alpha-Soft Error Rate in FDSOI 28 nm SRAMs

Soilihi Moindjie , Daniela Munteanu , Jean-Luc Autran , Victor Malherbe , Gilles Gasiot , et al.
Microelectronics Reliability, In press, ⟨10.1016/j.microrel.2023.115181⟩
Journal articles hal-04194288v1

Investigation of 30nm Gate-All-Around MOSFET Sensitivity to Heavy Ions: a 3-D Simulation Study

K. Castellani-Coulié , Daniela Munteanu , Jean-Luc Autran , V. Ferlet-Cavrois , P. Paillet , et al.
2005 8th European Conference on Radiation and Its Effects on Components and Systems, Sep 2005, Cap d'Agde, France. pp.G1-1-G1-8
Conference papers hal-02025580v1

Simulation Analysis of Quantum Confinement and Short-Channel Effects in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Mathieu Moreau , Daniela Munteanu , Jean-Luc Autran
Japanese Journal of Applied Physics, 2008, 47 (9), pp.7013 - 7018. ⟨10.1143/JJAP.47.7013⟩
Journal articles hal-01745615v1
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Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation

Daniela Munteanu , Jean-Luc Autran , S. Moindjie
Microelectronics Reliability, 2017, 76 (SI), pp.719-724. ⟨10.1016/j.microrel.2017.07.040⟩
Journal articles hal-01693979v1

Behavioral modeling of SRIM tables for numerical simulation

S. Martinie , T. Saad-Saoud , S. Moindjie , Daniela Munteanu , Jean-Luc Autran
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2014, 322, pp.2-6. ⟨10.1016/j.nimb.2013.12.023⟩
Journal articles hal-01430076v1

Real-time soft-error rate measurements: A review

Jean-Luc Autran , Daniela Munteanu , P. Roche , G. Gasiot
Microelectronics Reliability, 2014, 54 (8), pp.1455-1476. ⟨10.1016/j.microrel.2014.02.031⟩
Journal articles hal-01430077v1

Technology Downscaling Worsening Radiation Effects in Bulk: SOI to the Rescue

Philippe Roche , Jean-Luc Autran , Gilles Gasiot , Daniela Munteanu
2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2013, Washington, United States. ⟨10.1109/IEDM.2013.6724728⟩
Conference papers hal-01430081v1

Real-Time Soft-Error Testing of 40nm SRAMs

Jean-Luc Autran , S. Serre , Daniela Munteanu , S. Martinie , S. Semikh , et al.
2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012, Anaheim, CA, United States. ⟨10.1109/IRPS.2012.6241814⟩
Conference papers hal-01430086v1

A Review of Real-Time Soft-Error Rate Measurements in Electronic Circuits

Jean-Luc Autran , Daniela Munteanu , S. Serre , S. Sauze
2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012, Anaheim, CA, United States. ⟨10.1109/IRPS.2012.6241843⟩
Conference papers hal-01430087v1

Analytical Modeling of Alpha-Particle Emission Rate at Wafer-Level

Sébastien Martinie , Jean-Luc Autran , Daniela Munteanu , Frédéric Wrobel , Michael Gedion , et al.
IEEE Transactions on Nuclear Science, 2011, 58 (6, 1), pp.2798-2803. ⟨10.1109/TNS.2011.2170851⟩
Journal articles hal-01430100v1

Experimental Investigation on the Quasi-Ballistic Transport: Part II-Backscattering Coefficient Extraction and Link With the Mobility

Vincent Barral , Thierry Poiroux , Daniela Munteanu , Jean-Luc Autran , Simon Deleonibus
IEEE Transactions on Electron Devices, 2009, 56 (3), pp.420-430. ⟨10.1109/TED.2008.2011682⟩
Journal articles hal-01430104v1

Poly-gate replacement through contact hole (PRETCH): A new method for high-K/metal gate and multi-oxide implementation on chip

S Harrison , P Coronel , A Cros , R Cerutti , F Leverd , et al.
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, Unknown, Unknown Region. pp.291-294, ⟨10.1109/IEDM.2004.1419136⟩
Conference papers hal-01759469v1

3-D Quantum Numerical Simulation of Transient Response in Multiple-Gate Nanowire MOSFETs Submitted to Heavy Ion Irradiation

Daniela Munteanu , Jean-Luc Autran
L. Angermann. Numerical Simulations, Applications, Examples and Theory, INTECH, pp.67-88, 2011, 978-953-307-440-5. ⟨10.5772/13231⟩
Book sections hal-02121229v1

A New Unified Compact Model for Quasi-Ballistic Transport: Application to the Analysis of Circuit Performances of a Double-Gate Architecture

S. Martinie , Daniela Munteanu , G. Le Carval , Jean-Luc Autran
SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2008, Unknown, Unknown Region. pp.377+, ⟨10.1109/SISPAD.2008.4648316⟩
Conference papers hal-01759430v1

Experimental determination of the channel backscattering coefficient on 10-70 nm-metal-gate, Double-Gate transistors

Vincent Barral , T. Poiroux , M. Vinet , J. Widiez , B. Previtali , et al.
Solid-State Electronics, 2007, 51 (4), pp.537-542. ⟨10.1016/j.sse.2007.02.016⟩
Journal articles istex hal-01759440v1

Altitude SEE test European platform (ASTEP) and first results in CMOS 130 nm SRAM

Jean-Luc Autran , Philippe Roche , Joseph Borel , Christophe Sudre , Karine Castellani-Coulie , et al.
IEEE Transactions on Nuclear Science, 2007, 54 (4, 2), pp.1002-1009. ⟨10.1109/TNS.2007.891398⟩
Journal articles hal-01759445v1

Quantum short-channel compact modelling of drain-current in double-gate MOSFET

Daniela Munteanu , Jean-Luc Autran , Xavier Loussier , Samuel Harrison , Robin Cerutti , et al.
Solid-State Electronics, 2006, 50 (4), pp.680-686. ⟨10.1016/j.sse.2006.03.038⟩
Journal articles istex hal-01759446v1

Performance degradation induced by fringing field-induced barrier lowering and parasitic charge in double-gate metal-oxide-semiconductor field-effect transistors with high-kappa dielectrics

Jean-Luc Autran , Daniela Munteanu , M Houssa , K Castellani-Coulie , A Said
Japanese Journal of Applied Physics, 2005, 44 (12), pp.8362-8366. ⟨10.1143/JJAP.44.8362⟩
Journal articles hal-01759458v1

Compact model of the quantum short-channel threshold voltage in symmetric Double-Gate MOSFET

Daniela Munteanu , Jean-Luc Autran , S Harrison , K Nehari , O Tintori , et al.
Molecular Simulation, 2005, 31 (12), pp.831-837. ⟨10.1080/08927020500313995⟩
Journal articles hal-01759460v1

3D quantum modeling and simulation of multiple-gate nanowire MOSFETs

M Bescond , K Nehari , Jean-Luc Autran , N Cavassilas , Daniela Munteanu , et al.
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, Unknown, Unknown Region. pp.617-620, ⟨10.1109/IEDM.2004.1419237⟩
Conference papers hal-01759466v1

Modeling of quantum ballistic transport in double-gate devices with ultra-thin oxides

Daniela Munteanu , Jean-Luc Autran , E Decarre , R Dinescu
Journal of Non-Crystalline Solids, 2003, 322 (1-3), pp.206-212. ⟨10.1016/S0022-3093(03)00203-5⟩
Journal articles istex hal-01759475v1

Random-Walk Drift-Diffusion Charge-Collection Model For Reverse-Biased Junctions Embedded in Circuits

M. Glorieux , Jean-Luc Autran , Daniela Munteanu , S. Clerc , G. Gasiot , et al.
IEEE Transactions on Nuclear Science, 2014, 61 (6, 1), pp.3527-3534. ⟨10.1109/TNS.2014.2362073⟩
Journal articles hal-01430079v1

Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits

Jean-Luc Autran , M. Glorieux , Daniela Munteanu , S. Clerc , G. Gasiot , et al.
Microelectronics Reliability, 2014, 54 (9-10, SI), pp.2278-2283. ⟨10.1016/j.microrel.2014.07.088⟩
Journal articles hal-01430080v1

Physics-Based Analytical Modeling of Quasi-Ballistic Transport in Double-Gate MOSFETs: From Device to Circuit Operation

Sébastien Martinie , Daniela Munteanu , Gilles Le Carval , Jean-Luc Autran
IEEE Transactions on Electron Devices, 2009, 56 (11, SI), pp.2692-2702. ⟨10.1109/TED.2009.2030540⟩
Journal articles hal-01430108v1
Image document

SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation

Daniela Munteanu , Jean-Luc Autran
Microelectronics Reliability, 2015, 55, pp.1501 - 1505. ⟨10.1016/j.microrel.2015.06.107⟩
Journal articles hal-01429427v1