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Anomalous ambipolar transport in depleted GaAs nanowires

H. Hijazi , D. Paget , A C H Rowe , G. Monier , K. Lahlil et al.
Physical Review B, 2022, 105 (19), pp.195204. ⟨10.1103/physrevb.105.195204⟩
Journal articles hal-03716704v1
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Dynamics of Gold Droplet Formation on SiO 2 /Si(111) Surface

Hadi Hijazi , Frédéric Leroy , Guillaume Monier , Gabin Grégoire , Evelyne Gil et al.
Journal of Physical Chemistry C, 2020, 124 (22), pp.11946-11951. ⟨10.1021/acs.jpcc.0c02378⟩
Journal articles hal-02992036v1
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Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation

Yamina André , Nebile Isik Goktas , Guillaume Monier , Hadi Hijazi , Hussein Mehdi et al.
Nano Express, 2020, 1 (2), pp.020019. ⟨10.1088/2632-959X/aba7f1⟩
Journal articles hal-02997616v1

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

Gabin Grégoire , Mohammed Zeghouane , Curtis Goosney , Nebile Isik Goktas , Philipp Staudinger et al.
Crystal Growth & Design, 2021, 21 (9), pp.5158 - 5163. ⟨10.1021/acs.cgd.1c00518⟩
Journal articles hal-03336861v1

Submicrometer scale growth morphology control : a new route for the making of photonic crystral structures ?

Évelyne Gil-Lafon , Agnès Trassoudaine , D. Castelluci , A. Pimpinelli , R. Saoudi et al.
Proceedings of SPIE, the International Society for Optical Engineering, 2004, pp.5250. ⟨10.1117/12.513376⟩
Journal articles hal-00272536v1

Growth of high aspect ratio semiconductor (nano)structures: back to basics of crystallogenesis

Evelyne Gil
NSP 2016 : Nanostructures for Photonics, Jun 2016, Saint Pétersbourg, Russia
Conference papers hal-01656066v1

Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE

Geoffrey Avit , Mohammed Zeghouane , Yamina André , Dominique Castelluci , Evelyne Gil et al.
CrystEngComm, 2018, 20 (40), pp.6207-6213. ⟨10.1039/c8ce01177j⟩
Journal articles hal-03217102v1

Study of doping in GaAs layers by local probe techniques : micro-Raman, micro-photoluminescence and cathodoluminescence

B. Gerard , Évelyne Gil-Lafon , J. Napierala , A.M. Ardilla , O. Martinez et al.
2003, pp.79
Conference papers hal-00101887v1

HVPE-based orientation-patterned GaAs : added-value for non-linear applications.

D. Faye , E. Lallier , A. Grisard , B. Gerard , Évelyne Gil-Lafon et al.
Mat. Res. Soc. Symp. Proc., 2004, pp.Z.2.2.1. ⟨10.1557/PROC-799-Z2.2⟩
Journal articles hal-00272534v1
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Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation

Yamina Andre , Kaddour Lekhal , Philip E. Hoggan , Geoffrey Avit , Fabian Cadiz et al.
Journal of Chemical Physics, 2014, 140 (19), ⟨10.1063/1.4874875⟩
Journal articles hal-01727422v1

Defect-free InGaN nanowires on silicon whatever the indium composition

Mohammed Zeghouane , Elissa Roche , Geoffrey Avit , Yamina Andre , Catherine Bougerol et al.
RÉUNION PLÉNIÈRE DU GDR PULSE 2017, Oct 2017, Paris, France
Poster communications hal-01659715v1

Self-catalyzed growth of GaAs nanowires on silicon by HVPE

Zhenning Dong , Yamina Andre , Vladimir Dubrovskii , Catherine Bougerol , Guillaume Monier et al.
2016 International Conference Laser Optics (LO), Jun 2016, St Petersburg, Russia. ⟨10.1109/LO.2016.7549901⟩
Conference papers hal-01435124v1

Submicrometer scale growth morphology control for the making of photonic crystal structures.

Évelyne Gil-Lafon , Agnès Trassoudaine , D. Castelluci , A. Pimpinelli , R. Saoudi et al.
Mat. Res. Soc. Symp. Proceedings, 2004, pp.Z.2.3.1
Journal articles hal-00272535v1
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Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy

Mohammed Zeghouane , Geoffrey Avit , Yamina Andre , Thierry Taliercio , Pierre Ferret et al.
Crystal Growth & Design, 2020, 20 (4), pp.2232-2239. ⟨10.1021/acs.cgd.9b01346⟩
Journal articles hal-02532717v1

Two-particle surface diffusion-reaction models of vapour-phase epitaxial growth on vicinal surfaces.

A. Pimpinelli , R. Cadoret , Évelyne Gil-Lafon , J. Napierala , Agnès Trassoudaine et al.
Journal of Crystal Growth, 2003, pp.13
Journal articles hal-00272617v1

Direct condensation modelling for a two-particle growth system : application to GaAs grown by HVPE.

Évelyne Gil-Lafon , J. Napierala , A. Pimpinelli , R. Cadoret , Agnès Trassoudaine et al.
Journal of Crystal Growth, 2003, 258 (1-2), pp.14-25. ⟨10.1016/S0022-0248(03)01311-3⟩
Journal articles istex hal-00272616v1

Spontaneously formation of GaN/AlN core-shell nanowires on sapphire by hydride vapor phase epitaxy

Agnès Trassoudaine , Geoffrey Avit , Yamina André , Mohammed Réda Ramdani , Elissa Roche et al.
Journal of Crystal Growth, 2016, 454, pp.1-5. ⟨10.1016/j.jcrysgro.2016.08.031⟩
Journal articles hal-01385444v1

Optical characterization of GaAs/Si layers grown by the conformal method (confined lateral epitaxial growth)

A.M. Ardilla , O. Martinez , M. Avella , J. Jimenez , J. Napierala et al.
Journal of Materials Research, 2002, 17(6), pp.1341
Journal articles hal-00101875v1

Fabrication de cristaux photoniques par croissance cristalline anisotrope par la méthode aux hydrures

Rachida Saoudi , Évelyne Gil-Lafon , Agnès Trassoudaine , D. Castelluci , R.M Ramdani et al.
Journal Physique IV, 2006, 135, pp.265. ⟨10.1051/jp4:2006135083⟩
Journal articles istex ujm-00351625v1
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Formation of voids in selective area growth of InN nanorods in SiN x on GaN templates

Mohammed Zeghouane , Yamina Andre , Geoffrey Avit , Jihen Jridi , Catherine Bougerol et al.
Nano Futures, 2020, 4 (2), pp.025002. ⟨10.1088/2399-1984/ab8450⟩
Journal articles hal-02992214v1

Selective growth of ordered hexagonal InN nanorods

Mohammed Zeghouane , Geoffrey Avit , Thomas W. Cornelius , Damien Salomon , Yamina Andre et al.
CrystEngComm, 2019, 21 (16), pp.2702-2708. ⟨10.1039/C9CE00161A⟩
Journal articles hal-02107331v1

Temperature influence on the growth of gallium by HVPE in a mixed h2/n2 carrier gas.

Agnès Trassoudaine , R. Cadoret , Évelyne Gil-Lafon
Journal of crystal growth 0022-0248, 2004, pp.12
Journal articles hal-00272532v1
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Growth of long III-As NWs by hydride vapor phase epitaxy

Evelyne Gil , Yamina Andre
Nanotechnology, 2021, 32 (16), pp.162002. ⟨10.1088/1361-6528/abdb14⟩
Journal articles hal-03196224v1
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Mécanismes de croissance des faces {001} exactes et désorientées de GaAs par la méthode aux chlorures sous H2 : diffusion superficielle, croissance par spirale, mécanismes de désorption HCl et GaCl3

Robert Cadoret , Évelyne Gil-Lafon
Journal de Physique I, 1997, 7 (7), pp.889-907. ⟨10.1051/jp1:1997208⟩
Journal articles jpa-00247372v1

Circumventing the miscibility gap in InGaN nanowires emitting from blue to red

Elissa Roche , Yamina Andre , Geoffrey Avit , Catherine Bougerol , Dominique Castelluci et al.
Nanotechnology, 2018, 29 (46), pp.465602. ⟨10.1088/1361-6528/aaddc1⟩
Journal articles hal-01913823v1
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Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy

Hadi Hijazi , Mohammed Zeghouane , Jihen Jridi , Evelyne Gil , Dominique Castelluci et al.
Nanotechnology, 2021, 32 (15), pp.155601. ⟨10.1088/1361-6528/abdb16⟩
Journal articles hal-03137206v1

Croissance sélective de GaN par épitaxie en phase vapeur par la méthode aux hydrures (HVPE)

Geoffrey Avit , Mohammed Zeghouane , Yamina Andre , Elissa Roche , Evelyne Gil et al.
Session plénière GDR PULSE, Oct 2017, Paris, France
Conference papers hal-01659756v1

High aspect ratio semiconductor (nano)structures: unexpected building blocks for new devices?

Evelyne Gil
RFWNN 2017 : Semiconductor Nanostructures and Nanowires 3, Oct 2017, Suzdal - Moscou, Russia
Conference papers hal-01658298v1

Study of defects in conformal GaAs/Si layers by optical techniques and photoetching

B. Gerard , Évelyne Gil-Lafon , J. Napierala , A.M. Ardilla , O. Martinez et al.
2002, pp.70
Conference papers hal-00105808v1

Nucleation and initial radius of self-catalyzed III-V nanowires

V.G. Dubrovskii , S. Borie , T. Dagnet , L. Reynes , Y. André et al.
Journal of Crystal Growth, 2017, 459, pp.194-197. ⟨10.1016/j.jcrysgro.2016.12.024⟩
Journal articles hal-03217148v1