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Unusually long carrier lifetime in a Mott insulator revealed by time-resolved Photoemission Electron Microscopy

Danylo Babich , Keiki Fukumoto , Benoit Corraze , Julien Tranchant , Maciej Lorenc et al.
Frontiers in Optics / Laser Science (2020), Sep 2020, Washington, United States
Conference papers hal-03092746v1

First demonstration of “Leaky Integrate and Fire” artificial neuron behavior on (V0.95Cr0.05)2O3 thin film

Coline Adda , Laurent Cario , Julien Tranchant , Etienne Janod , Marie-Paule Besland et al.
MRS Communications, 2018, 8 (03), pp.835-841
Journal articles hal-01972275v1
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Competition between V2O3 phases deposited by one-step reactive sputtering process on polycrystalline conducting electrode

J.A.J. Rupp , E. Janod , M.-P. Besland , B. Corraze , A. Kindsmüller et al.
Thin Solid Films, 2020, 705, pp.138063. ⟨10.1016/j.tsf.2020.138063⟩
Journal articles hal-02793716v1

Metal–insulator transitions in (V1-xCrx)2O3 thin films deposited by reactive direct current magnetron co-sputtering

Madec Querré , Etienne Janod , Laurent Cario , Julien Tranchant , Benoît Corraze et al.
Thin Solid Films, 2016, 617, pp.56-62. ⟨10.1016/j.tsf.2015.12.043⟩
Journal articles hal-01254794v1
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Electric pulse induced electronic patchwork in the Mott insulator GaTa4Se8

Vincent Dubost , Tristan Cren , François Debontridder , Dimitri Roditchev , C. Vaju et al.
2012
Preprints, Working Papers, ... hal-00698631v1
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Magnetoelastic polarons in the hole-doped quasi-one dimensional model system Y2-xCaxBaNiO5

François-Xavier Lannuzel , Etienne Janod , Christophe Payen , Benoît Corraze , Daniel Braithwaite et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 70, pp.155111
Journal articles hal-00003219v1
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Resistive switching induced by electronic avalanche breakdown in GaTa$_4$Se$_{8-x}$Te$_x$ narrow gap Mott Insulators

Vincent Guiot , Laurent Cario , Etienne Janod , Benoît Corraze , Vinh Ta Phuoc et al.
Nature Communications, 2013, 4, pp.1722. ⟨10.1038/ncomms2735⟩
Journal articles hal-00814337v1

Mott insulators: A large class of materials for Leaky Integrate and Fire (LIF) artificial neuron

Coline Adda , Benoît Corraze , Pablo Stoliar , Pascale Diener , Julien Tranchant et al.
Journal of Applied Physics, 2018, 124 (15), pp.152124
Journal articles hal-01972254v1
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THz Driven Dynamics in Mott Insulator GaTa4Se8

Elsa Abreu , Danylo Babich , Etienne Janod , Sarah Houver , Benoît Corraze et al.
2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2019, Paris, France. pp.1-2, ⟨10.1109/IRMMW-THz.2019.8874120⟩
Conference papers hal-02358194v1
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Artificial Electro-Optical Neuron Integrating Hot Electrons in a Mott Insulator

Danylo Babich , Laurent Cario , Benoit Corraze , Maciej Lorenc , Julien Tranchant et al.
Physical Review Applied, 2022, 17 (1), pp.014040. ⟨10.1103/PhysRevApplied.17.014040⟩
Journal articles hal-03565982v1

Coherent long-range magnetic bound states in a superconductor

Gerbold C. S Ménard , Sébastien S Guissart , Christophe S Brun , Stéphane V Pons , Vasily V Stolyarov et al.
Nature Physics, 2015, 11, pp.1013 - 1016. ⟨10.1038/nphys3508⟩
Journal articles hal-01387239v1

Ultrafast Formation of a Charge Density Wave State in 1 T − TaS 2 : Observation at Nanometer Scales Using Time-Resolved X-Ray Diffraction

C. Laulhe , T. Huber , G. Lantz , A. Ferrer , S. Mariager et al.
Physical Review Letters, 2017, 118 (24), ⟨10.1103/PhysRevLett.118.247401⟩
Journal articles hal-01623528v1

Charge dynamics in quasi-one dimensional beta-Sr1/6V2O5

V.T. Phuoc , C. Sellier , Benoît Corraze , Etienne Janod , C. Marin et al.
The European Physical Journal B: Condensed Matter and Complex Systems, 2009, 69 (2), pp.181. ⟨10.1140/epjb/e2009-00148-9⟩
Journal articles istex hal-00432072v1
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Strain wave pathway to semiconductor-to-metal transition revealed by time-resolved X-ray powder diffraction

Céline Mariette , Maciej Lorenc , Hervé Cailleau , Eric Collet , Laurent Guérin et al.
Nature Communications, 2021, 12 (1), pp.1239. ⟨10.1038/s41467-021-21316-y⟩
Journal articles hal-03157411v1

Relaxation of a Spiking Mott Artificial Neuron

Federico Tesler , Coline Adda , Julien Tranchant , Benoît Corraze , Etienne Janod et al.
Physical Review Applied, 2018, 10 (5)
Journal articles hal-01972273v1

Control of resistive switching in AM 4 Q 8 narrow gap Mott insulators: A first step towards neuromorphic applications

Julien Tranchant , Etienne Janod , Benoît Corraze , Pablo Stoliar , Marcelo Rozenberg et al.
physica status solidi (a), 2015, 212 (2), pp.239 - 244. ⟨10.1002/pssa.201400158⟩
Journal articles istex hal-01725786v1

Photoinduced charge density wave phase in 1T-TaS 2 : growth and coarsening mechanisms

Amélie Jarnac , Vincent L R Jacques , Laurent Cario , Etienne Janod , Steven L Johnson et al.
Comptes Rendus. Physique, 2021, 22 (S2), pp.139-160. ⟨10.5802/crphys.89⟩
Journal articles hal-03525758v1

Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories.

Laurent Cario , C. Vaju , Benoît Corraze , V. Guiot , Etienne Janod et al.
Advanced Materials, 2010, 22 (45), pp.5193. ⟨10.1002/adma.201002521⟩
Journal articles hal-00848977v1

How a dc Electric Field Drives Mott Insulators Out of Equilibrium

Pascale Diener , Etienne Janod , B. Corraze , M. Querre , C. Adda et al.
Physical Review Letters, 2018, 121 (1), ⟨10.1103/PhysRevLett.121.016601⟩
Journal articles hal-01848488v1

Ba 2 F 2 Fe 1.5 Se 3 : An Intergrowth Compound Containing Iron Selenide Layers

Dalel Driss , Etienne Janod , Benoît Corraze , Catherine Guillot-Deudon , Laurent Cario et al.
Inorganic Chemistry, 2016, 55 (6), pp.2923 - 2928. ⟨10.1021/acs.inorgchem.5b02662⟩
Journal articles hal-01723557v1

Coherent long-range magnetic bound states in a superconductor

Gerbold Ménard , Sébastien Guissart , Christophe Brun , Stéphane Pons , Vasily Stolyarov et al.
Nature Physics, 2015, 11 (12), pp.1013-1016. ⟨10.1038/nphys3508⟩
Journal articles hal-02989221v1
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Electric field Assisted Nanostucturing of a Mott Insulator

Vincent Dubost , Tristan Cren , C. Vaju , Laurent Cario , Benoît Corraze et al.
Advanced Functional Materials, 2009, 19, pp.2800. ⟨10.1002/adfm.200900208⟩
Journal articles hal-00399238v1

Nanosession: Variants of Resistive Switching

Akihito Sawa , Atsushi Tsurumaki-Fukuchi , Hiroyuki Yamada , Christian Rodenbücher , Krzysztof Szot et al.
Heber, Jörg and Schlom, Darrell and Tokura, Yoshinori and Waser, Rainer and Wuttig, Matthias. Frontiers in Electronic Materials, Wiley-VCH Verlag GmbH & Co. KGaA, pp.247--258, 2013, 978-3-527-66770-3 978-3-527-41191-7. ⟨10.1002/9783527667703.ch45⟩
Book sections hal-01716453v1
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J eff = 3 2 metallic phase and unconventional superconductivity in GaTa 4 Se 8

Min Yong Jeong , Seo Hyoung Chang , Hyeong Jun Lee , Jae-Hoon Sim , Kyeong Jun Lee et al.
Physical Review B, 2021, 103 (8), ⟨10.1103/PhysRevB.103.L081112⟩
Journal articles hal-03173361v1

Crystal structure and charge order below the metal-insulator transition in the vanadium bronze $\beta$-SrV$_6$O$_{15}$

Claire Sellier , Florent Boucher , Etienne Janod
Solid State Sciences, 2003, 5, pp.591-599
Journal articles hal-00116484v1

Crystal structure and chemical bonding in the mixed anion compound BaSF

D. Driss , S. Cadars , P. Deniard , J.-Y. Mevellec , B. Corraze et al.
Dalton Transactions, 2017, 46 (46), pp.16244 - 16250. ⟨10.1039/c7dt03611f⟩
Journal articles hal-01705363v1

Deposition of GaV4S8 thin films by H2S/Ar reactive sputtering for ReRAM applications

J. Tranchant , A. Pellaroque , Etienne Janod , Benoit Angleraud , Benoît Corraze et al.
Journal of Physics D: Applied Physics, 2014, 47 (6), pp.65309. ⟨10.1088/0022-3727/47/6/065309⟩
Journal articles hal-00982778v1

Resistive Switching Induced by Electric Pulses in a Single-Component Molecular Mott Insulator

Pablo Stoliar , Pascale Diener , Julien Tranchant , Benoît Corraze , Benjamin Brière et al.
Journal of Physical Chemistry C, 2015, 119, 119 (119), pp.2983-2988. ⟨10.1021/jp512810e⟩
Journal articles hal-01122400v1
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Electric-Field-Induced Resistive Switching in a Family of Mott Insulators : towards Non-Volatile Mott-RRAM Memories

Laurent Cario , Cristian Vaju , Benoît Corraze , Vincent Guiot , Etienne Janod et al.
Advanced Materials, 2010, 22 (45), pp.5193. ⟨10.1002/adma.201002521⟩
Journal articles hal-00815184v1

Electrical characterizations of resistive random access memory devices based on GaV4S8 thin layers

J. Tranchant , Etienne Janod , Laurent Cario , Benoît Corraze , E. Souchier et al.
Thin Solid Films, 2013, 533, pp.61. ⟨10.1016/j.tsf.2012.10.104⟩
Journal articles hal-00968793v1