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77 Results
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Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structuresSemiconductor Science and Technology, 2018, 33 (11), pp.114013. ⟨10.1088/1361-6641/aae354⟩
Journal articles
hal-01944345v1
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Growth and properties of GaAsBi thin layers by molecular beam epitaxyInternational Workshop on Bismuth-Containing Semiconductors, Jul 2016, Shanghai, China. 2016
Poster communications
hal-01947425v1
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Study of a tunable filter with collinear acoustooptical TE-TM mode conversion in GaAs/AlAs multilayer11th III-V Semiconductor Device Simulation Workshop, 1999, Lille, France
Conference papers
hal-01556259v1
|
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Experimental and Theoretical Determination of Electron g- Factor in GaAsBi Alloys6th international workshop on bismuth−containing semiconductors, Prof. Susan Babcock, Jul 2015, Madison, United States
Conference papers
hal-01947411v1
|
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Dilute Bismides for Optoelectronic ApplicationsThe 8th International Workshop on Advanced Materials Science and Nanotechnology (IWAMSN2016), Dr Le Si Dang (IN, France); Prof. Kazuhito Hashimoto (NIMS, Japan); Prof. Nguyen Quang Liem (IMS, Vietnam), Nov 2016, Halong City, Vietnam
Conference papers
hal-01947444v1
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Spin properties of dilute bismide alloysThe Physics of Optoelectronic Materials and Devices, In the memory of Prof. Naci Balkan, Mar 2017, Colchester, United Kingdom
Conference papers
hal-01947255v1
|
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Influence of chemical process on structural and optical properties of as-grown and thermal annealed GaAsBi alloys8th International Workshop on Bismuth-Containing Semiconductors, Prof. Kirstin Volz, Jul 2017, Marburg, Germany
Conference papers
hal-01947272v1
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Electrical control of the electron spin relaxation in (In)GaAs-based quantum wells2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.1-2
Conference papers
hal-02052796v1
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Modelling of interband transitions in GaAs tunnel diodeSemiconductor Science and Technology, 2016, 31 (6), pp.06LT01. ⟨10.1088/0268-1242/31/6/06LT01⟩
Journal articles
hal-01857640v1
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In-situ magnification inferred curvature measurement applied to dilute bismide growth21st International Conference on Molecular Beam Epitaxy (ICMBE 2021), Sep 2021, Mexico (virtual), Mexico
Conference papers
hal-03358732v1
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Anisotropic electron g factor as a probe of the electronic structure of GaBi x As 1 − x / GaAs epilayersPhysical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 90 (19), ⟨10.1103/PhysRevB.90.195301⟩
Journal articles
hal-02050898v2
|
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Modélisation semiclassique du courant tunnel interbandes dans les jonctions tunnel GaAsJournées Nationales du Photovoltaïque (JNPV 2017), Dec 2017, Dourdan, France. 1p., 2017
Poster communications
hal-01780605v1
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Solutions technologiques planaires pour un confinement par oxyde enterré pour de nouvelles architectures VCSELColloque du GdR Nanofils et GdR Pulse, Oct 2014, Toulouse, France
Conference papers
hal-01857522v1
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Planar technological solutions for emmbedded oxide-based confinement for new VCSELs architecturesEuropean VCSEL Day, May 2014, Rennes, France. pp.1-2
Conference papers
hal-01857530v1
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Low-loss buried AlGaAs/AlOx waveguides using a quasi-planar processOptics Express, 2017, 25 (16), pp.19275 - 19275. ⟨10.1364/OE.25.019275⟩
Journal articles
hal-01611629v1
|
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Electron spin polarization in GaAsBi quantum wells: Temperature dependence8th International Workshop on Bismuth-Containing Semiconductors, Prof. Kirstin Volz, Jul 2017, Marburg, Germany
Conference papers
hal-01947288v1
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Structural and optical properties of GaAsBi thin layers and quantum wells grown by molecular beam epitaxy (poster)18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014
Poster communications
hal-01947354v1
|
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Carrier dynamics in GaAsBi quantum wellsInternational Workshop on Bismuth-Containing Semiconductors, Prof. Shumin Wang, Jul 2016, Shanghai, China
Conference papers
hal-01947423v1
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Carrier dynamics in GaAsBi quantum wells11th IEEE Nanotechnology Materials and Devices Conference (NMDC), Dr. K. Makasheva; Dr. C. Bonafos, Oct 2016, Toulouse, France
Conference papers
hal-01947430v1
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Transfer of AlGaAs/GaAs crystalline Bragg mirror from a GaAs substrate to a fused silica substrate by direct bondingSPIE Photonics Europe, Apr 2022, Strasbourg, France
Conference papers
cea-03735678v1
|
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III-V based Heterojunction Tunnel for Multijunction Solar CellsPULSE summer school : Epitaxy promises and updates, Sep 2015, Porquerolles, France
Conference papers
hal-01857568v1
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Fabrication, characterization and simulation of MBE-grown GaAs-based tunnel diodes with type I and type II heterojunctions for multijunction solar cells19th International Conference on Molecular Beam Epitaxy (MBE 2016), Sep 2016, Montpellier, France. 2p., 2016
Poster communications
hal-01857639v1
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Thermal annealing effects on optical and structural properties of GaBiAs epilayers: Origin of the thermal annealing-induced redshift in GaBiAsJournal of Alloys and Compounds, 2016, 686, pp.976-981. ⟨10.1016/j.jallcom.2016.05.326⟩
Journal articles
hal-01943084v1
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Type II heterojunction tunnel diodes based on GaAs for multi-junction solar cells: Fabrication, characterization and simulation2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.7777108, ⟨10.1109/NMDC.2016.7777108⟩
Conference papers
hal-01436488v1
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Electron spin dynamics in GaAsBi quantum wellsSPIE Photonics WEST, Jan 2017, San Francisco, United States
Conference papers
hal-01947450v1
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Electron spin dynamics and g-factor in GaAsBiApplied Physics Letters, 2013, 102 (25), pp.252107. ⟨10.1063/1.4812660⟩
Journal articles
hal-02050545v1
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Réalisation de guides d’onde enterrés avec un procédé quasi-planaireJournées Nationales de l'Optique Guidée (JNOG), Jul 2016, Bordeaux, France. 3p
Conference papers
hal-01768308v1
|
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Forte biréfringence de forme dans guides monomodes de type ruban sur super-réseaux GaAs/AlAsJournées Nationales de l’Optique Guidée, JNOG, 1997, St Etienne, France. pp.199-201
Conference papers
hal-01557038v1
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III-V Semiconductor Integrated (De)Modulators/Multiplexers for coherence multiplexed sensor networks10th international conference on solid-state sensors and actuators, 1999, Sendaï, Japan
Conference papers
hal-01556263v1
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Bi-assisted nucleation of GaAs grown on 5°off (001) silicon substrates by molecular beam epitaxy18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014
Poster communications
hal-01947368v1
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