Physical description and analysis of doped carbon nanotube interconnects - Archive ouverte HAL Access content directly
Conference Papers Year : 2016

Physical description and analysis of doped carbon nanotube interconnects


Ever since the discovery of graphene, the 2D carbon structure material has been attracting a lot interest due its electrical, thermal and mechanical properties. Here, we investigate the carbon nanotubes (CNT), wrapping a 2D graphene sheet to form a 1D carbon structure. CNT has a Dirac-cone energy band, which makes it either a semiconductor or metal. With continuous aggressive scaling, the technology using copper as interconnect is reaching its limit on current density, thermal and conductivity performance, thus finding a new interconnect material is an ongoing quest. CNT with its high conductivity, high electro-migration, and low temperature effect opens a door for on-chip interconnect applications. However, the uncontrollable chirality of pure CNT motivates us to explore doped CNTs. Doping alleviates the need to control chirality and enhances the metallic property of CNTs. In this work, we start first to describe the fundamental physics of doped CNTs and describe how doping changes the electrical property of CNTs. We also provide analytical models and simulation results on CNT conductance variation for N-type doped CNTs. Simulation results show that doping can reduce overall CNT resistance by 89%.
Fichier principal
Vignette du fichier
07833695.pdf (1.27 Mo) Télécharger le fichier
Origin Publisher files allowed on an open archive

Dates and versions

lirmm-01457338 , version 1 (06-02-2017)



Jie Liang, Liuyang Zhang, Nadine Azemard, Pascal Nouet, Aida Todri-Sanial. Physical description and analysis of doped carbon nanotube interconnects. PATMOS: Power And Timing Modeling, Optimization and Simulation, Sep 2016, Brême, Germany. pp.250-255, ⟨10.1109/PATMOS.2016.7833695⟩. ⟨lirmm-01457338⟩
270 View
308 Download



Gmail Mastodon Facebook X LinkedIn More