Thermochemical and Mass Transport Modelling of the Chemical Vapour Deposition of Si1-xGex
Résumé
The purpose of this article is to present, for the chemical vapour deposition process, mass transport rnodels with near local thermochemical equilibrium imposed in the gas-phase and at the deposition surface. The theoretical problems arising from the linking of the two approaches, thermodynamics and mass transport, are shown and a solution procedure is proposed. As an illustration, selected results of thermodynamic and mass transport analysis and of the coupled approach showed that, for the deposition of Si1-xGex solid solution at 1300 K (system Si-Ge-CI-H-Ar), the themodynamic heterogeneous stability of the reactive gases and the thermal diffusion led to the germanium depletion of the deposit.
Domaines
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