Article Dans Une Revue Journal de Physique IV Proceedings Année : 1994

Modeling of self-heating effects in thin-film soi MOSFET's as a function of temperature

J. Jomaah
  • Fonction : Auteur
G. Ghibaudo
F. Balestra

Résumé

Self-heating phenomena are studied from room down to near liquid helium temperatures in fully depleted N channel thin film SIMOX MOS devices. A simple theoretical analysis of the self-heating effect is worked out. A method for the extraction of the thermal resistance and the device temperature rise directly from the static output characteristics is derived. Also direct self heating transient measurements are conducted in order to confirm our analysis.

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jpa-00253103 , version 1 (04-02-2008)

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J. Jomaah, G. Ghibaudo, F. Balestra. Modeling of self-heating effects in thin-film soi MOSFET's as a function of temperature. Journal de Physique IV Proceedings, 1994, 04 (C6), pp.C6-57-C6-62. ⟨10.1051/jp4:1994609⟩. ⟨jpa-00253103⟩

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